Precision Recess of AlGaN/GaN with Controllable Etching Rate Using ICP-RIE Oxidation and Wet Etching

R. Sokolovskij, J. Sun, Fabio Santagata, Elina Iervolino, S. Li, G.Y. Zhang, P. M. Sarro, G. Q. Zhang*

*Corresponding author for this work

Research output: Contribution to journalConference articleScientificpeer-review

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Material Science