Preparation of large, location-controlled Si grains by excimer laser crystallization of ¿-Si film sputtered at 100 °C

M He; EJJ Neihof; Y van Andel; H Schellevis; R Ishihara; JW Metselaar; CIM Beenakker

Preparation of large, location-controlled Si grains by excimer laser crystallization of ¿-Si film sputtered at 100 °C

M He, EJJ Neihof, Y van Andel, H Schellevis, R Ishihara, JW Metselaar, CIM Beenakker

Electronic Components, Technology and Materials

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

Original language	Undefined/Unknown
Title of host publication	2006 Spring Meeting Symposium Proceedings, MRS Proceedings Volume 910 Symposium A: Amorphous and Polycrystalline Thin-Film Silicon Science and Technology ¿ 2006
Editors	s.n.
Place of Publication	San Francisco (CA), USA
Publisher	s.l.
Pages	-
Publication status	Published - 2006
Event	MRS Spring Meeting - San Francisco, USA Duration: 17 Apr 2006 → 21 Apr 2006

Publication series

Name
Publisher	s.l.

Conference

Conference	MRS Spring Meeting
Period	17/04/06 → 21/04/06

Keywords

Elektrotechniek
Techniek
conference contrib. refereed
Conf.proc. > 3 pag

Cite this

He, M., Neihof, EJJ., van Andel, Y., Schellevis, H., Ishihara, R., Metselaar, JW., & Beenakker, CIM. (2006). Preparation of large, location-controlled Si grains by excimer laser crystallization of ¿-Si film sputtered at 100 °C. In s.n. (Ed.), 2006 Spring Meeting Symposium Proceedings, MRS Proceedings Volume 910 Symposium A: Amorphous and Polycrystalline Thin-Film Silicon Science and Technology ¿ 2006 (pp. -). s.l..

He, M ; Neihof, EJJ ; van Andel, Y ; Schellevis, H ; Ishihara, R ; Metselaar, JW ; Beenakker, CIM. / Preparation of large, location-controlled Si grains by excimer laser crystallization of ¿-Si film sputtered at 100 °C. 2006 Spring Meeting Symposium Proceedings, MRS Proceedings Volume 910 Symposium A: Amorphous and Polycrystalline Thin-Film Silicon Science and Technology ¿ 2006. editor / s.n. San Francisco (CA), USA : s.l., 2006. pp. -

@inproceedings{5242d7ca29054646b75e50568ea7f80a,

title = "Preparation of large, location-controlled Si grains by excimer laser crystallization of ¿-Si film sputtered at 100 °C",

keywords = "Elektrotechniek, Techniek, conference contrib. refereed, Conf.proc. > 3 pag",

author = "M He and EJJ Neihof and {van Andel}, Y and H Schellevis and R Ishihara and JW Metselaar and CIM Beenakker",

year = "2006",

language = "Undefined/Unknown",

publisher = "s.l.",

pages = "--",

editor = "s.n.",

booktitle = "2006 Spring Meeting Symposium Proceedings, MRS Proceedings Volume 910 Symposium A: Amorphous and Polycrystalline Thin-Film Silicon Science and Technology ¿ 2006",

note = "null ; Conference date: 17-04-2006 Through 21-04-2006",

}

He, M, Neihof, EJJ, van Andel, Y, Schellevis, H , Ishihara, R, Metselaar, JW & Beenakker, CIM 2006, Preparation of large, location-controlled Si grains by excimer laser crystallization of ¿-Si film sputtered at 100 °C. in s.n. (ed.), 2006 Spring Meeting Symposium Proceedings, MRS Proceedings Volume 910 Symposium A: Amorphous and Polycrystalline Thin-Film Silicon Science and Technology ¿ 2006. s.l., San Francisco (CA), USA, pp. -, MRS Spring Meeting, 17/04/06.

Preparation of large, location-controlled Si grains by excimer laser crystallization of ¿-Si film sputtered at 100 °C. / He, M; Neihof, EJJ; van Andel, Y; Schellevis, H ; Ishihara, R; Metselaar, JW; Beenakker, CIM.

2006 Spring Meeting Symposium Proceedings, MRS Proceedings Volume 910 Symposium A: Amorphous and Polycrystalline Thin-Film Silicon Science and Technology ¿ 2006. ed. / s.n. San Francisco (CA), USA : s.l., 2006. p. -.

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

TY - GEN

T1 - Preparation of large, location-controlled Si grains by excimer laser crystallization of ¿-Si film sputtered at 100 °C

AU - He, M

AU - Neihof, EJJ

AU - van Andel, Y

AU - Schellevis, H

AU - Ishihara, R

AU - Metselaar, JW

AU - Beenakker, CIM

PY - 2006

Y1 - 2006

KW - Elektrotechniek

KW - Techniek

KW - conference contrib. refereed

KW - Conf.proc. > 3 pag

M3 - Conference contribution

SP - -

BT - 2006 Spring Meeting Symposium Proceedings, MRS Proceedings Volume 910 Symposium A: Amorphous and Polycrystalline Thin-Film Silicon Science and Technology ¿ 2006

A2 - s.n., null

PB - s.l.

CY - San Francisco (CA), USA

Y2 - 17 April 2006 through 21 April 2006

ER -

He M, Neihof EJJ, van Andel Y, Schellevis H , Ishihara R, Metselaar JW et al. Preparation of large, location-controlled Si grains by excimer laser crystallization of ¿-Si film sputtered at 100 °C. In s.n., editor, 2006 Spring Meeting Symposium Proceedings, MRS Proceedings Volume 910 Symposium A: Amorphous and Polycrystalline Thin-Film Silicon Science and Technology ¿ 2006. San Francisco (CA), USA: s.l. 2006. p. -