Original language | Undefined/Unknown |
---|---|
Pages (from-to) | 321-324 |
Number of pages | 4 |
Journal | Microelectronic Engineering |
Volume | 35 |
Publication status | Published - 1997 |
Preparation of nanometer-scale windows in SiO2 for selective epitaxial growth of Si based divices
JWH Maes, PW Lukey, T Zijlstra, CCG Visser, J Caro, EWJM van der Drift, FD Tichelaar, S Radelaar
Research output: Contribution to journal › Article › Scientific › peer-review
1
Citation
(Scopus)