Properties of (Nb0.35, Ti0.15)-xN1-x thin films deposited on silicon wafers at ambient substrate temperature.

N Iossad, AV Mijiritskii, VV Rodatis, NM van der Pers, BD Jackson, JR Gao, SN Polyakov, PN Dmitriev, TM Klapwijk

    Research output: Contribution to journalArticleScientificpeer-review

    Original languageUndefined/Unknown
    Pages (from-to)5756-5759
    Number of pages4
    JournalJournal of Applied Physics
    Issue number11
    Publication statusPublished - 2000


    • ZX Int.klas.verslagjaar < 2002

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