Properties of (Nb0.35, Ti0.15)xNi1-x thin films deposited on silicon wafers at ambient substrate temperature.

N Iossad; AV Mijiritskii; VV Roddatis; NM van der Pers; BD Jackson; JR Gao; SN Polyakov; PN Dmitriev; TM Klapwijk

Properties of (Nb0.35, Ti0.15)xNi1-x thin films deposited on silicon wafers at ambient substrate temperature.

N Iossad, AV Mijiritskii, VV Roddatis, NM van der Pers, BD Jackson, JR Gao, SN Polyakov, PN Dmitriev, TM Klapwijk

Research output: Contribution to journal › Article › Scientific › peer-review

Original language	Undefined/Unknown
Pages (from-to)	5756-5759
Number of pages	4
Journal	Journal of Applied Physics
Volume	88
Issue number	10
Publication status	Published - 2000

Bibliographical note

ISSN 0021-8979

Keywords

ZX Int.klas.verslagjaar < 2002

Cite this

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title = "Properties of (Nb0.35, Ti0.15)xNi1-x thin films deposited on silicon wafers at ambient substrate temperature.",

keywords = "ZX Int.klas.verslagjaar < 2002",

author = "N Iossad and AV Mijiritskii and VV Roddatis and {van der Pers}, NM and BD Jackson and JR Gao and SN Polyakov and PN Dmitriev and TM Klapwijk",

note = "ISSN 0021-8979",

year = "2000",

language = "Undefined/Unknown",

volume = "88",

pages = "5756--5759",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "AIP Publishing",

number = "10",

}

TY - JOUR

T1 - Properties of (Nb0.35, Ti0.15)xNi1-x thin films deposited on silicon wafers at ambient substrate temperature.

AU - Iossad, N

AU - Mijiritskii, AV

AU - Roddatis, VV

AU - van der Pers, NM

AU - Jackson, BD

AU - Gao, JR

AU - Polyakov, SN

AU - Dmitriev, PN

AU - Klapwijk, TM

N1 - ISSN 0021-8979

PY - 2000

Y1 - 2000

KW - ZX Int.klas.verslagjaar < 2002

M3 - Article

SN - 0021-8979

VL - 88

SP - 5756

EP - 5759

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 10

ER -