Pt-AlGaN/GaN HEMT-sensor layout optimization for enhancement of hydrogen detection

Robert Sokolovskij, Elina Iervolino, Changhui Zhao, Fei Wang, Hongyu Yu, Fabio Santagata, Pasqualina M. Sarro, Guo Qi Zhang

Research output: Chapter in Book/Conference proceedings/Edited volumeConference contributionScientificpeer-review

8 Citations (Scopus)
230 Downloads (Pure)


This paper reports on the layout optimization of Pt-AlGaN/GaN HEMT-sensors for enhancing hydrogen sensor performance. Sensors with gate width and length ratios Wg/Lg from 0.25 to 10 were designed, fabricated and tested for the detection of hydrogen gas at 200 °C. Sensitivity, sensing current variation and transient response are directly related to the sensor gate electrode Wg/Lg ratio. The obtained results demonstrated a 217 % increase in sensitivity and 4630 % increase in sensing current variation at 500 ppm H2 for a Wg/Lg from 0.25 to 10. In addition, the detection limit was lowered to 5 ppm. Transient characteristics demonstrated faster sensor response to H2, but slower recovery rates with increasing ratio.

Original languageEnglish
Title of host publicationProceedings of IEEE Sensors Conference 2017
Place of PublicationPiscataway, NJ
Number of pages3
ISBN (Electronic)978-1-5090-1012-7
ISBN (Print)978-1-5090-1013-4
Publication statusPublished - 2017
EventIEEE SENSORS 2017 - Glasgow, United Kingdom
Duration: 29 Oct 20171 Nov 2017


ConferenceIEEE SENSORS 2017
Country/TerritoryUnited Kingdom
Internet address

Bibliographical note

Accepted author manuscript


  • AlGaN
  • GaN
  • H2 sensor
  • HEMT
  • high temperature
  • sensor layout


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