TY - JOUR
T1 - Ptychography as a wavefront sensor for high-numerical aperture extreme ultraviolet lithography
T2 - Analysis and limitations
AU - Dwivedi, Priya
AU - Pereira, Silvania F.
AU - Urbach, H. Paul
PY - 2019
Y1 - 2019
N2 - Wavefront aberration measurements are required to test an extreme ultraviolet (EUV) imaging system. For a high-NA EUV imaging system, where conventional wavefront-sensing techniques show limitations, ptychography can be used for this purpose. However, at the wavelength region of EUV (i.e., 13.5 nm), the position accuracy of the scanning mask that is defined for ptychography is stringent. Therefore, we propose ptychography combined with mask position correction. The simulated intensity patterns, the ones we use, resemble expected EUV experimental data. Finally, we show the results in the presence of Poisson noise and the tolerance of the position correction method for error in mask positions.
AB - Wavefront aberration measurements are required to test an extreme ultraviolet (EUV) imaging system. For a high-NA EUV imaging system, where conventional wavefront-sensing techniques show limitations, ptychography can be used for this purpose. However, at the wavelength region of EUV (i.e., 13.5 nm), the position accuracy of the scanning mask that is defined for ptychography is stringent. Therefore, we propose ptychography combined with mask position correction. The simulated intensity patterns, the ones we use, resemble expected EUV experimental data. Finally, we show the results in the presence of Poisson noise and the tolerance of the position correction method for error in mask positions.
KW - Aberrations retrieval
KW - Extreme ultraviolet lithography
KW - Lensless imaging
KW - Phase retrieval
KW - Wavefront sensing
UR - http://www.scopus.com/inward/record.url?scp=85065505343&partnerID=8YFLogxK
U2 - 10.1117/1.OE.58.4.043102
DO - 10.1117/1.OE.58.4.043102
M3 - Article
AN - SCOPUS:85065505343
SN - 0091-3286
VL - 58
JO - Optical Engineering
JF - Optical Engineering
IS - 4
M1 - 043102
ER -