Pure dopant deposition of B and Ga for ultrashallow junctions in Si-based devices

LK Nanver; A Sammak; V Mohammadi; KRC Mok; L Qi; A Sakic; N Golshani; J Derakhshandeh; TLM Scholtes; WB De Boer

doi:10.1149/04901.0025ecst

Pure dopant deposition of B and Ga for ultrashallow junctions in Si-based devices

LK Nanver, A Sammak, V Mohammadi, KRC Mok, L Qi, A Sakic, N Golshani, J Derakhshandeh, TLM Scholtes, WB De Boer

Electronic Components, Technology and Materials

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

19 Citations (Scopus)

Original language	English
Title of host publication	27th Symposium on Microelectronics Technology and Devices
Pages	25-33
Number of pages	9
DOIs	https://doi.org/10.1149/04901.0025ecst
Publication status	Published - 2012

Publication series

Name

Name	ECS Transactions
Volume	49
ISSN (Print)	1938-5862

Keywords

Conf.proc. > 3 pag

Access to Document

10.1149/04901.0025ecst

Cite this

@inproceedings{6b8e214323a64864abc66e40c907a91d,

title = "Pure dopant deposition of B and Ga for ultrashallow junctions in Si-based devices",

keywords = "Conf.proc. > 3 pag",

author = "LK Nanver and A Sammak and V Mohammadi and KRC Mok and L Qi and A Sakic and N Golshani and J Derakhshandeh and TLM Scholtes and {De Boer}, WB",

year = "2012",

doi = "10.1149/04901.0025ecst",

language = "English",

pages = "25--33",

booktitle = "27th Symposium on Microelectronics Technology and Devices",

}

TY - GEN

T1 - Pure dopant deposition of B and Ga for ultrashallow junctions in Si-based devices

AU - Nanver, LK

AU - Sammak, A

AU - Mohammadi, V

AU - Mok, KRC

AU - Qi, L

AU - Sakic, A

AU - Golshani, N

AU - Derakhshandeh, J

AU - Scholtes, TLM

AU - De Boer, WB

PY - 2012

Y1 - 2012

KW - Conf.proc. > 3 pag

U2 - 10.1149/04901.0025ecst

DO - 10.1149/04901.0025ecst

M3 - Conference contribution

SP - 25

EP - 33

BT - 27th Symposium on Microelectronics Technology and Devices

ER -