PureGaB p +n Ge diodes grown in large windows to Si with a sub -300 nm transition region

A Sammak, L Qi, WB De Boer, LK Nanver

Research output: Contribution to journalArticleScientificpeer-review

10 Citations (Scopus)
Original languageEnglish
Pages (from-to)126-133
Number of pages8
JournalSolid-State Electronics
Publication statusPublished - 2012

Bibliographical note

Betreft: selected papers from the 41st European solid-state device research conference ESSDERC, Helsinki, Finland

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