Quantized Conductance and Large g-Factor Anisotropy in InSb Quantum Point Contacts

Fanming Qu, Jasper Van Veen, Folkert K. De Vries, Arjan J.A. Beukman, Michael Wimmer, Wei Yi, Andrey A. Kiselev, Binh Minh Nguyen, Leo P. Kouwenhoven*, More Authors

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

49 Citations (Scopus)


Because of a strong spin-orbit interaction and a large Landé g-factor, InSb plays an important role in research on Majorana fermions. To further explore novel properties of Majorana fermions, hybrid devices based on quantum wells are conceived as an alternative approach to nanowires. In this work, we report a pronounced conductance quantization of quantum point contact devices in InSb/InAlSb quantum wells. Using a rotating magnetic field, we observe a large in-plane (|g1| = 26) and out-of-plane (|g1| = 52) g-factor anisotropy. Additionally, we investigate crossings of subbands with opposite spins and extract the electron effective mass from magnetic depopulation of one-dimensional subbands.

Original languageEnglish
Pages (from-to)7509-7513
JournalNano Letters
Issue number12
Publication statusPublished - 2016


  • conductance quantization
  • electron effective mass
  • g-factor anisotropy
  • InSb quantum well
  • quantum point contact


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