Quantum Transport Properties of Industrial Si 28 / Si O2 28

D. Sabbagh, L. Massa, S. V. Amitonov, J. M. Boter, G. Droulers, H. G.J. Eenink, M. Veldhorst, L. M.K. Vandersypen, G. Scappucci

Research output: Contribution to journalArticleScientificpeer-review

39 Citations (Scopus)
136 Downloads (Pure)


We investigate the structural and quantum transport properties of isotopically enriched Si28/SiO228 stacks deposited on 300-mm Si wafers in an industrial CMOS fab. Highly uniform films are obtained with an isotopic purity greater than 99.92%. Hall-bar transistors with an oxide stack comprising 10 nm of Si28O2 and 17 nm of Al2O3 (equivalent oxide thickness of 17 nm) are fabricated in an academic cleanroom. A critical density for conduction of 1.75×1011cm-2 and a peak mobility of 9800cm2/Vs are measured at a temperature of 1.7 K. The Si28/SiO228 interface is characterized by a roughness of Δ=0.4nm and a correlation length of Λ=3.4nm. An upper bound for valley splitting energy of 480μeV is estimated at an effective electric field of 9.5 MV/m. These results support the use of wafer-scale Si28/SiO228 as a promising material platform to manufacture industrial spin qubits.

Original languageEnglish
Article number014013
Number of pages8
JournalPhysical Review Applied
Issue number1
Publication statusPublished - 2019


Dive into the research topics of 'Quantum Transport Properties of Industrial Si 28 / Si O2 28'. Together they form a unique fingerprint.

Cite this