QUBiC4X: An f/sub T//f/sub max/ = 130/140GHz SiGe:C-BiCMOS manufacturing technology witg elite passives for emerging microwave applications

P Deixler, A Rodriguez, W de Boer, H Sun, R Colclaser, D Bower, N Bell, A Yao, R Brock, Y Bouttement, GAM Hurkx, LF Tiemeijer, JCJ Paasschens, HGA Huizing, DMH Hartskeerl, P Agarwal, PHC Magnee, E Aksen, JW Slotboom

Research output: Chapter in Book/Conference proceedings/Edited volumeConference contributionScientificpeer-review

59 Citations (Scopus)
Original languageUndefined/Unknown
Title of host publicationProc. Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)
PublisherIEEE Society
Pages233-236
Number of pages4
ISBN (Print)0-7803-8618-3
Publication statusPublished - 2004

Publication series

Name
PublisherIEEE

Keywords

  • conference contrib. refereed
  • Conf.proc. > 3 pag

Cite this

Deixler, P., Rodriguez, A., de Boer, W., Sun, H., Colclaser, R., Bower, D., Bell, N., Yao, A., Brock, R., Bouttement, Y., Hurkx, GAM., Tiemeijer, LF., Paasschens, JCJ., Huizing, HGA., Hartskeerl, DMH., Agarwal, P., Magnee, PHC., Aksen, E., & Slotboom, JW. (2004). QUBiC4X: An f/sub T//f/sub max/ = 130/140GHz SiGe:C-BiCMOS manufacturing technology witg elite passives for emerging microwave applications. In Proc. Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) (pp. 233-236). IEEE Society.