Quantum computing's value proposition of an exponential speedup in computing power for certain applications has propelled a vast array of research across the globe. While several different physical implementations of device level qubits are being investigated, semiconductor spin qubits have many similarities to scaled transistors. In this article, we discuss the device/integration of full 300mm based spin qubit devices. This includes the development of (i) a 28 Si epitaxial module ecosystem for growing isotopically pure substrates with among the best Hall mobility at these oxide thicknesses, (ii) a custom 300mm qubit testchip and integration/device line, and (iii) a novel dual nested gate integration process for creating quantum dots.
|Title of host publication||2018 IEEE International Electron Devices Meeting, IEDM 2018|
|Publisher||Institute of Electrical and Electronics Engineers (IEEE)|
|Publication status||Published - 2019|
|Event||64th Annual IEEE International Electron Devices Meeting, IEDM 2018 - San Francisco, United States|
Duration: 1 Dec 2018 → 5 Dec 2018
|Conference||64th Annual IEEE International Electron Devices Meeting, IEDM 2018|
|Period||1/12/18 → 5/12/18|