Qubit Device Integration Using Advanced Semiconductor Manufacturing Process Technology

N. Thomas; T. F. Watson; M. Metz; J. M. Boter; Juan Pablo Dehollain Lorenzana; G. Droulers; G. Eenink; R. Li; L. Massa; D. Sabbagh; N. Samkharadze; C. Volk; A. M. Zwerver; M. Veldhorst; G. Scappucci; L. M.K. Vandersypen

doi:10.1109/IEDM.2018.8614624

Qubit Device Integration Using Advanced Semiconductor Manufacturing Process Technology

N. Thomas
, T. F. Watson
, M. Metz
, J. M. Boter
, Juan Pablo Dehollain Lorenzana
, G. Droulers
, G. Eenink
, R. Li
, L. Massa
, D. Sabbagh
, N. Samkharadze
, C. Volk
, A. M. Zwerver
, M. Veldhorst
, G. Scappucci
, L. M.K. Vandersypen

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

27 Citations (Scopus)

58 Downloads (Pure)

Abstract

Quantum computing's value proposition of an exponential speedup in computing power for certain applications has propelled a vast array of research across the globe. While several different physical implementations of device level qubits are being investigated, semiconductor spin qubits have many similarities to scaled transistors. In this article, we discuss the device/integration of full 300mm based spin qubit devices. This includes the development of (i) a ²⁸ Si epitaxial module ecosystem for growing isotopically pure substrates with among the best Hall mobility at these oxide thicknesses, (ii) a custom 300mm qubit testchip and integration/device line, and (iii) a novel dual nested gate integration process for creating quantum dots.

Original language	English
Title of host publication	2018 IEEE International Electron Devices Meeting, IEDM 2018
Editors	Ken Rim
Publisher	IEEE
Pages	6.3.1-6.3.4
Volume	2018-December
ISBN (Electronic)	978-172811987-8
DOIs	https://doi.org/10.1109/IEDM.2018.8614624
Publication status	Published - 2019
Event	64th Annual IEEE International Electron Devices Meeting, IEDM 2018 - San Francisco, United States Duration: 1 Dec 2018 → 5 Dec 2018

Conference

Conference	64th Annual IEEE International Electron Devices Meeting, IEDM 2018
Country/Territory	United States
City	San Francisco
Period	1/12/18 → 5/12/18

Bibliographical note

Green Open Access added to TU Delft Institutional Repository ‘You share, we take care!’ – Taverne project https://www.openaccess.nl/en/you-share-we-take-care Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.

Access to Document

10.1109/IEDM.2018.8614624

EDITORIAL DEF. Eur Ger Med J 2019_s41999-019-00171-7Final published version, 460 KB

Cite this

Thomas, N., Watson, T. F., Metz, M., Boter, J. M., Dehollain Lorenzana, J. P., Droulers, G., Eenink, G., Li, R., Massa, L., Sabbagh, D., Samkharadze, N., Volk, C., Zwerver, A. M., Veldhorst, M., Scappucci, G., & Vandersypen, L. M. K. (2019). Qubit Device Integration Using Advanced Semiconductor Manufacturing Process Technology. In K. Rim (Ed.), 2018 IEEE International Electron Devices Meeting, IEDM 2018 (Vol. 2018-December, pp. 6.3.1-6.3.4). Article 8614624 IEEE. https://doi.org/10.1109/IEDM.2018.8614624

@inproceedings{97ec7db94b614a03ac987e77cc2eebbf,

title = "Qubit Device Integration Using Advanced Semiconductor Manufacturing Process Technology",

abstract = " Quantum computing's value proposition of an exponential speedup in computing power for certain applications has propelled a vast array of research across the globe. While several different physical implementations of device level qubits are being investigated, semiconductor spin qubits have many similarities to scaled transistors. In this article, we discuss the device/integration of full 300mm based spin qubit devices. This includes the development of (i) a 28 Si epitaxial module ecosystem for growing isotopically pure substrates with among the best Hall mobility at these oxide thicknesses, (ii) a custom 300mm qubit testchip and integration/device line, and (iii) a novel dual nested gate integration process for creating quantum dots. ",

author = "N. Thomas and Watson, \{T. F.\} and M. Metz and Boter, \{J. M.\} and \{Dehollain Lorenzana\}, \{Juan Pablo\} and G. Droulers and G. Eenink and R. Li and L. Massa and D. Sabbagh and N. Samkharadze and C. Volk and Zwerver, \{A. M.\} and M. Veldhorst and G. Scappucci and Vandersypen, \{L. M.K.\}",

note = "Green Open Access added to TU Delft Institutional Repository {\textquoteleft}You share, we take care!{\textquoteright} – Taverne project https://www.openaccess.nl/en/you-share-we-take-care Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public. ; 64th Annual IEEE International Electron Devices Meeting, IEDM 2018 ; Conference date: 01-12-2018 Through 05-12-2018",

year = "2019",

doi = "10.1109/IEDM.2018.8614624",

language = "English",

volume = "2018-December",

pages = "6.3.1--6.3.4",

editor = "Ken Rim",

booktitle = "2018 IEEE International Electron Devices Meeting, IEDM 2018",

publisher = "IEEE",

address = "United States",

}

Thomas, N, Watson, TF, Metz, M, Boter, JM, Dehollain Lorenzana, JP, Droulers, G, Eenink, G, Li, R, Massa, L, Sabbagh, D, Samkharadze, N, Volk, C, Zwerver, AM , Veldhorst, M , Scappucci, G & Vandersypen, LMK 2019, Qubit Device Integration Using Advanced Semiconductor Manufacturing Process Technology. in K Rim (ed.), 2018 IEEE International Electron Devices Meeting, IEDM 2018. vol. 2018-December, 8614624, IEEE, pp. 6.3.1-6.3.4, 64th Annual IEEE International Electron Devices Meeting, IEDM 2018, San Francisco, United States, 1/12/18. https://doi.org/10.1109/IEDM.2018.8614624

Qubit Device Integration Using Advanced Semiconductor Manufacturing Process Technology. / Thomas, N.; Watson, T. F.; Metz, M. et al.
2018 IEEE International Electron Devices Meeting, IEDM 2018. ed. / Ken Rim. Vol. 2018-December IEEE, 2019. p. 6.3.1-6.3.4 8614624.

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

TY - GEN

T1 - Qubit Device Integration Using Advanced Semiconductor Manufacturing Process Technology

AU - Thomas, N.

AU - Watson, T. F.

AU - Metz, M.

AU - Boter, J. M.

AU - Dehollain Lorenzana, Juan Pablo

AU - Droulers, G.

AU - Eenink, G.

AU - Li, R.

AU - Massa, L.

AU - Sabbagh, D.

AU - Samkharadze, N.

AU - Volk, C.

AU - Zwerver, A. M.

AU - Veldhorst, M.

AU - Scappucci, G.

AU - Vandersypen, L. M.K.

N1 - Green Open Access added to TU Delft Institutional Repository ‘You share, we take care!’ – Taverne project https://www.openaccess.nl/en/you-share-we-take-care Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.

PY - 2019

Y1 - 2019

N2 - Quantum computing's value proposition of an exponential speedup in computing power for certain applications has propelled a vast array of research across the globe. While several different physical implementations of device level qubits are being investigated, semiconductor spin qubits have many similarities to scaled transistors. In this article, we discuss the device/integration of full 300mm based spin qubit devices. This includes the development of (i) a 28 Si epitaxial module ecosystem for growing isotopically pure substrates with among the best Hall mobility at these oxide thicknesses, (ii) a custom 300mm qubit testchip and integration/device line, and (iii) a novel dual nested gate integration process for creating quantum dots.

AB - Quantum computing's value proposition of an exponential speedup in computing power for certain applications has propelled a vast array of research across the globe. While several different physical implementations of device level qubits are being investigated, semiconductor spin qubits have many similarities to scaled transistors. In this article, we discuss the device/integration of full 300mm based spin qubit devices. This includes the development of (i) a 28 Si epitaxial module ecosystem for growing isotopically pure substrates with among the best Hall mobility at these oxide thicknesses, (ii) a custom 300mm qubit testchip and integration/device line, and (iii) a novel dual nested gate integration process for creating quantum dots.

UR - https://www.scopus.com/pages/publications/85061816246

U2 - 10.1109/IEDM.2018.8614624

DO - 10.1109/IEDM.2018.8614624

M3 - Conference contribution

AN - SCOPUS:85061816246

VL - 2018-December

SP - 6.3.1-6.3.4

BT - 2018 IEEE International Electron Devices Meeting, IEDM 2018

A2 - Rim, Ken

PB - IEEE

T2 - 64th Annual IEEE International Electron Devices Meeting, IEDM 2018

Y2 - 1 December 2018 through 5 December 2018

ER -

Qubit Device Integration Using Advanced Semiconductor Manufacturing Process Technology

Abstract

Conference

Bibliographical note

Access to Document

Other files and links

Fingerprint

Cite this