Qubits made by advanced semiconductor manufacturing

A. M.J. Zwerver, T. Krähenmann, S. V. Amitonov, J. M. Boter, G. Droulers, M. Lodari, N. Samkharadze, G. Zheng, G. Scappucci, M. Veldhorst, L. M.K. Vandersypen*, More Authors

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

124 Citations (Scopus)
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Abstract

Full-scale quantum computers require the integration of millions of qubits, and the potential of using industrial semiconductor manufacturing to meet this need has driven the development of quantum computing in silicon quantum dots. However, fabrication has so far relied on electron-beam lithography and, with a few exceptions, conventional lift-off processes that suffer from low yield and poor uniformity. Here we report quantum dots that are hosted at a 28Si/28SiO2 interface and fabricated in a 300 mm semiconductor manufacturing facility using all-optical lithography and fully industrial processing. With this approach, we achieve nanoscale gate patterns with excellent yield. In the multi-electron regime, the quantum dots allow good tunnel barrier control—a crucial feature for fault-tolerant two-qubit gates. Single-spin qubit operation using magnetic resonance in the few-electron regime reveals relaxation times of over 1 s at 1 T and coherence times of over 3 ms.

Original languageEnglish
Pages (from-to)184-190
JournalNature Electronics
Volume5
Issue number3
DOIs
Publication statusPublished - 2022

Bibliographical note

correction DOI 10.1038/s41928-022-00772-4
D. Correas-Serrano is the corrected in the HTML and PDF versions of the article

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