Radio-Frequency Reflectometry in Silicon-Based Quantum Dots

Y. Y. Liu, S. G.J. Philips, L. A. Orona, N. Samkharadze, T. McJunkin, E. R. Macquarrie, M. A. Eriksson, L. M.K. Vandersypen, A. Yacoby

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Abstract

Radio-frequency (rf) reflectometry offers a fast and sensitive method for charge sensing and spin readout in gated quantum dots. We focus in this work on the implementation of rf readout in accumulation-mode gate-defined quantum dots, where the large parasitic capacitance poses a challenge. We describe and test two methods for mitigating the effect of the parasitic capacitance, one by on-chip modifications and a second by off-chip changes. We demonstrate that on-chip modifications enable high-performance charge readout in Si/SixGe1-x quantum dots, achieving a fidelity of 99.9% for a measurement time of 1μs.

Original languageEnglish
Article number014057
Number of pages7
JournalPhysical Review Applied
Volume16
Issue number1
DOIs
Publication statusPublished - 2021

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