Raman Fingerprint of Pressure-Induced Phase Transitions in TiS3Nanoribbons: Implications for Thermal Measurements under Extreme Stress Conditions

K. K. Mishra, T. R. Ravindran, Joshua O. Island, Eduardo Flores, Jose Ramon Ares, Carlos Sanchez, Isabel J. Ferrer, Herre S.J. Van Der Zant, Andres Castellanos-Gomez, More Authors

Research output: Contribution to journalArticleScientificpeer-review

2 Citations (Scopus)

Abstract

Two-dimensional layered trichalcogenide materials have recently attracted the attention of the scientific community because of their robust mechanical and thermal properties and applications in opto- and nanoelectronics devices. We report the pressure dependence of out-of-plane Ag Raman modes in high quality few-layer titanium trisulfide (TiS3) nanoribbons grown using a direct solid-gas reaction method and infer their cross-plane thermal expansion coefficient. Both mechanical stability and thermal properties of the TiS3 nanoribbons are elucidated by using phonon-spectrum analyses. Raman spectroscopic studies at high pressure (up to 34 GPa) using a diamond anvil cell identify four prominent Ag Raman bands; a band at 557 cm-1 softens under compression, and others at 175, 300, and 370 cm-1 show normal hardening. Anomalies in phonon mode frequencies and excessive broadening in line width of the soft phonon about 13 GPa are attributed to the possible onset of a reversible structural transition. A complete structural phase transition at 43 GPa is inferred from the Ag soft mode frequency (557 cm-1) versus pressure extrapolation curve, consistent with recently reported theoretical predictions. Using the experimental mode Grüneisen parameters γi of Raman modes, we estimated the cross-plane thermal expansion coefficient Cv of the TiS3 nanoribbons at ambient phase to be 1.321 × 10-6 K-1. The observed results are expected to be useful in calibration and performance of next-generation nanoelectronics and optical devices under extreme stress conditions.

Original languageEnglish
Pages (from-to)8794-8802
Number of pages9
JournalACS Applied Nano Materials
Volume3
Issue number9
DOIs
Publication statusPublished - 2020

Keywords

  • 2D semiconductors
  • high pressure
  • phonons
  • Raman spectroscopy
  • TiS

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