TY - JOUR
T1 - Recombination reduction at the c-Si/RCA oxide interface through Ar-H2 plasma treatment
AU - Landheer, Kees
AU - Bronsveld, Paula C P
AU - Poulios, Ioannis
AU - Tichelaar, Frans D.
AU - Kaiser, Monja
AU - Schropp, Ruud E I
AU - Rath, Jatin K.
PY - 2017/2/28
Y1 - 2017/2/28
N2 - An Ar‑H2 plasma treatment was applied on an ultrathin RCA oxide to create well-passivated silicon wafers with symmetric c‑Si/SiOx:H/a‑Si:H passivation layer stacks. The effective lifetime of these samples increased from 10 μs to 4 ms after annealing at 200 °C through Ar‑H2 plasma treatment of the oxide. The results indicate that the plasma treatment can modify the RCA oxide and this enables atomic hydrogen diffusion at low annealing temperature, leading to a well passivated c‑Si/SiOx:H interface. This might provide new possibilities to use wet chemical oxides in c-Si solar cells, for example as tunnel contacts.
AB - An Ar‑H2 plasma treatment was applied on an ultrathin RCA oxide to create well-passivated silicon wafers with symmetric c‑Si/SiOx:H/a‑Si:H passivation layer stacks. The effective lifetime of these samples increased from 10 μs to 4 ms after annealing at 200 °C through Ar‑H2 plasma treatment of the oxide. The results indicate that the plasma treatment can modify the RCA oxide and this enables atomic hydrogen diffusion at low annealing temperature, leading to a well passivated c‑Si/SiOx:H interface. This might provide new possibilities to use wet chemical oxides in c-Si solar cells, for example as tunnel contacts.
UR - http://www.scopus.com/inward/record.url?scp=85006868081&partnerID=8YFLogxK
U2 - 10.1016/j.apsusc.2016.11.119
DO - 10.1016/j.apsusc.2016.11.119
M3 - Letter
AN - SCOPUS:85006868081
SN - 0169-4332
VL - 396
SP - 1226
EP - 1230
JO - Applied Surface Science
JF - Applied Surface Science
ER -