Refinement strategies for optimal inclusion of prior information in ptychography

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Abstract

The imaging and inspection of extreme ultraviolet (EUV) masks is an important aspect of EUV lithography. The availability of actinic mask inspection tools able to generate highly resolved defect maps of defective EUV layouts is needed to ensure defect-free wafer prints. The technological interest towards phase-shift absorber materials for the next generation of EUV masks, and the associated need for phase metrology at the absorber level, makes phase retrieval methods a particularly interesting option for actinic inspection. In this work we use ptychography as an inspection tool for EUV masks. We show how variational and statistical methods can be employed to include a-priori information in the ptychographic inverse problem and how to cluster different update rules - stemming from the minimization of appropriate cost functionals - to optimally include prior information in ptychography under Poisson noise.

Original languageEnglish
Title of host publicationExtreme Ultraviolet Lithography 2020
EditorsPatrick P. Naulleau, Paolo A. Gargini, Toshiro Itani, Kurt G. Ronse
PublisherSPIE
Number of pages10
Volume11517
ISBN (Electronic)9781510638426
DOIs
Publication statusPublished - 2020
EventExtreme Ultraviolet Lithography 2020 - Virtual, Online, United States
Duration: 21 Sep 202025 Sep 2020

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume11517
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

ConferenceExtreme Ultraviolet Lithography 2020
CountryUnited States
CityVirtual, Online
Period21/09/2025/09/20

Keywords

  • EUV lithography
  • Mask inspection
  • Optimization
  • Phase retrieval
  • Prior information
  • Ptychography

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