INIS
accumulation
20%
applications
20%
approximations
20%
comparative evaluations
20%
control
20%
density
40%
design
20%
devices
100%
dielectrics
20%
dimensions
100%
electron density
20%
epitaxy
100%
fabrication
40%
hall effect
20%
height
20%
indium arsenides
100%
interference
20%
layers
20%
length
20%
mobility
40%
nanostructures
20%
nanowires
40%
quantum information
20%
substrates
20%
superconductors
20%
surfaces
20%
width
20%
Engineering
Application Information
33%
Density
100%
Design
33%
Dielectrics
33%
Fields
33%
Functional Element
33%
Obtains
33%
Ohmic Contacts
33%
Spatial Dimension
100%
Substrates
33%
Superconductor
33%
Two Dimensional
100%
Material Science
Carrier Concentration
25%
Density
50%
Device Fabrication
25%
Devices
100%
Dielectric Material
25%
Epitaxy
100%
Hall Mobility
25%
Nanowire
50%
Superconducting Material
25%
Temperature
25%