Reliability issues in RRAM ternary memories affected by variability and aging mechanisms

Antonio Rubio, Manuel Escudero, Peyman Pouyan

Research output: Chapter in Book/Conference proceedings/Edited volumeConference contributionScientificpeer-review

2 Citations (Scopus)

Abstract

Resistive switching Random Access Memories (RRAM) are being considered as a promising alternative for conventional memories mainly due to their high speed, scalability, CMOS compatibility, Non-Volatile behavior (NVM), and consequent orientation to low power consumption. Advances in the RRAM technology as well as enhancement of the control of the cells are opening the use of these devices for multi-valued logic. But the cycle-to-cycle variability and the still reduced endurance are becoming serious limitations. This paper analyzes the impact of both mechanisms on 1T1R cells and suggests potential adaptive mechanisms to enlarge its lifetime.
Original languageEnglish
Title of host publication2017 IEEE 23rd International Symposium on On-Line Testing and Robust System Design (IOLTS)
Place of PublicationPiscataway, NJ
PublisherIEEE
Pages90-92
Number of pages3
ISBN (Electronic)978-1-5386-0352-9
DOIs
Publication statusPublished - 2017
Event23rd IEEE International Symposium on On-Line Testing and Robust System Design - Hotel Makedonia Palace, Thessaloniki, Greece
Duration: 3 Jul 20175 Jul 2017
Conference number: 23
http://tima.univ-grenoble-alpes.fr/conferences/iolts/iolts17/

Conference

Conference23rd IEEE International Symposium on On-Line Testing and Robust System Design
Abbreviated titleIOLTS 2017
CountryGreece
CityThessaloniki
Period3/07/175/07/17
Internet address

Keywords

  • RRAM devices
  • ternary memories
  • variability
  • endurance
  • aging
  • adaptive mechanisms

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