Resist assisted patterning

Nima Kalhor*, Paul F.A. Alkemade

*Corresponding author for this work

Research output: Chapter in Book/Conference proceedings/Edited volumeChapterScientificpeer-review

5 Citations (Scopus)

Abstract

Helium ion beam lithography (HIL) has been demonstrated as a promising alternative to electron beam lithography (EBL) for R&D purposes, offering high-resolution lithography at high pattern densities. This chapter reviews focused He ion beam lithography, providing a detailed discussion on the ion beam-resist interaction mechanisms and latest experimental results in this field. In addition, impact of ion shot noise is examined, a comparison to He-ion beam milling is made, and future directions are mentioned.

Original languageEnglish
Title of host publicationHelium Ion Microscopy (NanoScience and Technology)
EditorsG. Hlawacek, A. Gölzhäuser
PublisherSpringer
Pages395-414
Number of pages20
ISBN (Print)978-3319419886
DOIs
Publication statusPublished - 2016

Publication series

NameNanoScience and Technology
ISSN (Print)14344904

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