Resistive and CTAT Temperature Sensors in a Silicon Carbide CMOS Technology

Joost Romijn; Luke M. Middelburg; Sten Vollebregt; Brahim el Mansouri; Henk W. van Zeijl; Alexander  May; Tobias  Erlbacher; Guoqi Zhang; Pasqualina M. Sarro

doi:10.1109/SENSORS47087.2021.9639845

Resistive and CTAT Temperature Sensors in a Silicon Carbide CMOS Technology

Joost Romijn^*
, Luke M. Middelburg
, Sten Vollebregt
, Brahim el Mansouri
, Henk W. van Zeijl
, Alexander May
, Tobias Erlbacher
, Guoqi Zhang
, Pasqualina M. Sarro

^*Corresponding author for this work

Electronic Components, Technology and Materials

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

11 Citations (Scopus)

265 Downloads (Pure)

Abstract

Accurately sensing the temperature in silicon carbide (power) devices is of great importance to their reliable operation. Here, temperature sensors by resistive and CMOS structures are fabricated and characterized in an open silicon carbide CMOS technology. Over a range of 25-200°C, doped design layers have negative temperature coefficients of resistance, with a maximum change of 79%. Secondly, CMOS devices are used to implement a CTAT, which achieves a maximum sensitivity of 7.5mV/K in a temperature range of 25-165°C. The integration of readout electronics and sensors that are capable of operation in higher temperature than silicon, opens application in harsher environments.

Original language	English
Title of host publication	2021 IEEE Sensors
Subtitle of host publication	Proceedings
Place of Publication	Piscataway
Publisher	IEEE
Pages	1-4
Number of pages	4
ISBN (Electronic)	978-1-7281-9501-8
ISBN (Print)	978-1-7281-9502-5
DOIs	https://doi.org/10.1109/SENSORS47087.2021.9639845
Publication status	Published - 2021
Event	2021 IEEE Sensors - Online at Sydney, Australia Duration: 31 Oct 2021 → 3 Nov 2021

Publication series

Name	Proceedings of IEEE Sensors
Volume	2021-October
ISSN (Print)	1930-0395
ISSN (Electronic)	2168-9229

Conference

Conference	2021 IEEE Sensors
Country/Territory	Australia
City	Online at Sydney
Period	31/10/21 → 3/11/21

Bibliographical note

Green Open Access added to TU Delft Institutional Repository 'You share, we take care!' - Taverne project https://www.openaccess.nl/en/you-share-we-take-care

Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.

Keywords

4H-SiC
SiC CMOS
silicon carbide
temperature sensor
wide bandgap semiconductors

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10.1109/SENSORS47087.2021.9639845

Resistive_and_CTAT_Temperature_Sensors_in_a_Silicon_Carbide_CMOS_TechnologyFinal published version, 5.53 MB

Cite this

Romijn, J., Middelburg, L. M., Vollebregt, S., el Mansouri, B., van Zeijl, H. W., May, A., Erlbacher , T., Zhang, G., & Sarro, P. M. (2021). Resistive and CTAT Temperature Sensors in a Silicon Carbide CMOS Technology. In 2021 IEEE Sensors: Proceedings (pp. 1-4). Article 9639845 (Proceedings of IEEE Sensors; Vol. 2021-October). IEEE. https://doi.org/10.1109/SENSORS47087.2021.9639845

@inproceedings{941f20c27a0d4aa6b12b57788d8ec7d3,

title = "Resistive and CTAT Temperature Sensors in a Silicon Carbide CMOS Technology",

abstract = "Accurately sensing the temperature in silicon carbide (power) devices is of great importance to their reliable operation. Here, temperature sensors by resistive and CMOS structures are fabricated and characterized in an open silicon carbide CMOS technology. Over a range of 25-200°C, doped design layers have negative temperature coefficients of resistance, with a maximum change of 79\%. Secondly, CMOS devices are used to implement a CTAT, which achieves a maximum sensitivity of 7.5mV/K in a temperature range of 25-165°C. The integration of readout electronics and sensors that are capable of operation in higher temperature than silicon, opens application in harsher environments.",

keywords = "4H-SiC, SiC CMOS, silicon carbide, temperature sensor, wide bandgap semiconductors",

author = "Joost Romijn and Middelburg, \{Luke M.\} and Sten Vollebregt and \{el Mansouri\}, Brahim and \{van Zeijl\}, \{Henk W.\} and Alexander May and Tobias Erlbacher and Guoqi Zhang and Sarro, \{Pasqualina M.\}",

note = "Green Open Access added to TU Delft Institutional Repository 'You share, we take care!' - Taverne project https://www.openaccess.nl/en/you-share-we-take-care Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.; 2021 IEEE Sensors ; Conference date: 31-10-2021 Through 03-11-2021",

year = "2021",

doi = "10.1109/SENSORS47087.2021.9639845",

language = "English",

isbn = "978-1-7281-9502-5",

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address = "United States",

}

Romijn, J, Middelburg, LM, Vollebregt, S, el Mansouri, B, van Zeijl, HW, May, A, Erlbacher , T, Zhang, G & Sarro, PM 2021, Resistive and CTAT Temperature Sensors in a Silicon Carbide CMOS Technology. in 2021 IEEE Sensors: Proceedings., 9639845, Proceedings of IEEE Sensors, vol. 2021-October, IEEE, Piscataway, pp. 1-4, 2021 IEEE Sensors, Online at Sydney, Australia, 31/10/21. https://doi.org/10.1109/SENSORS47087.2021.9639845

Resistive and CTAT Temperature Sensors in a Silicon Carbide CMOS Technology. / Romijn, Joost; Middelburg, Luke M.; Vollebregt, Sten et al.
2021 IEEE Sensors: Proceedings. Piscataway: IEEE, 2021. p. 1-4 9639845 (Proceedings of IEEE Sensors; Vol. 2021-October).

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

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T1 - Resistive and CTAT Temperature Sensors in a Silicon Carbide CMOS Technology

AU - Romijn, Joost

AU - Middelburg, Luke M.

AU - Vollebregt, Sten

AU - el Mansouri, Brahim

AU - van Zeijl, Henk W.

AU - May, Alexander

AU - Erlbacher , Tobias

AU - Zhang, Guoqi

AU - Sarro, Pasqualina M.

N1 - Green Open Access added to TU Delft Institutional Repository 'You share, we take care!' - Taverne project https://www.openaccess.nl/en/you-share-we-take-care Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.

PY - 2021

Y1 - 2021

N2 - Accurately sensing the temperature in silicon carbide (power) devices is of great importance to their reliable operation. Here, temperature sensors by resistive and CMOS structures are fabricated and characterized in an open silicon carbide CMOS technology. Over a range of 25-200°C, doped design layers have negative temperature coefficients of resistance, with a maximum change of 79%. Secondly, CMOS devices are used to implement a CTAT, which achieves a maximum sensitivity of 7.5mV/K in a temperature range of 25-165°C. The integration of readout electronics and sensors that are capable of operation in higher temperature than silicon, opens application in harsher environments.

AB - Accurately sensing the temperature in silicon carbide (power) devices is of great importance to their reliable operation. Here, temperature sensors by resistive and CMOS structures are fabricated and characterized in an open silicon carbide CMOS technology. Over a range of 25-200°C, doped design layers have negative temperature coefficients of resistance, with a maximum change of 79%. Secondly, CMOS devices are used to implement a CTAT, which achieves a maximum sensitivity of 7.5mV/K in a temperature range of 25-165°C. The integration of readout electronics and sensors that are capable of operation in higher temperature than silicon, opens application in harsher environments.

KW - 4H-SiC

KW - SiC CMOS

KW - silicon carbide

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KW - wide bandgap semiconductors

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CY - Piscataway

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ER -

Resistive and CTAT Temperature Sensors in a Silicon Carbide CMOS Technology

Abstract

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Bibliographical note

Keywords

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