Response Time of Detectors Based on a Boron-Silicon Junction

Roumen Nojdelov, Stoyan Nihtianov

Research output: Chapter in Book/Conference proceedings/Edited volumeConference contributionScientificpeer-review

3 Citations (Scopus)


We report a study of the response time of detectors for low-penetration-depth radiation (deep ultra-violet photons, low-energy electrons), based on the newly discovered boron-silicon junction. This kind of junction is built using the low-temperature chemical vapor deposition of amorphous boron onto n-type crystalline silicon (LT PureB process). As expected, the obtained results showed a significantly increased response time, compared with p-n junction photodetectors. Unexpectedly, a further increase in the response time was observed by applying a reverse-bias voltage, even though the junction capacitance decreased. A possible explanation for this phenomenon is the rapid increase in the sheet resistance of the single-atomic-Iayer boron-silicon interface on the surface of the photodetector, which exceeds the junction capacitance decrease.

Original languageEnglish
Title of host publication2018 IEEE SENSORS, SENSORS 2018 - Conference Proceedings
EditorsA. Roy, Y. Gianchandani
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Number of pages4
ISBN (Electronic)978-153864707-3
Publication statusPublished - 2018
EventIEEE Sensors 2018: 17th IEEE Sensors Conference - Pullman Aerocity, New Delhi, India
Duration: 28 Oct 201831 Oct 2018
Conference number: 17


ConferenceIEEE Sensors 2018
CityNew Delhi


  • boron-silicon junction
  • low-penetration radiation
  • photodetectors
  • response time


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