Response Time of Detectors Based on a Boron-Silicon Junction

Roumen Nojdelov; Stoyan Nihtianov

doi:10.1109/ICSENS.2018.8589914

Response Time of Detectors Based on a Boron-Silicon Junction

Electronic Instrumentation

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

3 Citations (Scopus)

Abstract

We report a study of the response time of detectors for low-penetration-depth radiation (deep ultra-violet photons, low-energy electrons), based on the newly discovered boron-silicon junction. This kind of junction is built using the low-temperature chemical vapor deposition of amorphous boron onto n-type crystalline silicon (LT PureB process). As expected, the obtained results showed a significantly increased response time, compared with p-n junction photodetectors. Unexpectedly, a further increase in the response time was observed by applying a reverse-bias voltage, even though the junction capacitance decreased. A possible explanation for this phenomenon is the rapid increase in the sheet resistance of the single-atomic-Iayer boron-silicon interface on the surface of the photodetector, which exceeds the junction capacitance decrease.

Original language	English
Title of host publication	2018 IEEE SENSORS, SENSORS 2018 - Conference Proceedings
Editors	A. Roy, Y. Gianchandani
Publisher	IEEE
Number of pages	4
Volume	2018-October
ISBN (Electronic)	978-153864707-3
DOIs	https://doi.org/10.1109/ICSENS.2018.8589914
Publication status	Published - 2018
Event	IEEE Sensors 2018: 17th IEEE Sensors Conference - Pullman Aerocity, New Delhi, India Duration: 28 Oct 2018 → 31 Oct 2018 Conference number: 17

Conference

Conference	IEEE Sensors 2018
Country/Territory	India
City	New Delhi
Period	28/10/18 → 31/10/18

Keywords

boron-silicon junction
low-penetration radiation
photodetectors
response time

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10.1109/ICSENS.2018.8589914

Cite this

@inproceedings{919daae1d2244e89a4d28b1860bbba7b,

title = "Response Time of Detectors Based on a Boron-Silicon Junction",

abstract = "We report a study of the response time of detectors for low-penetration-depth radiation (deep ultra-violet photons, low-energy electrons), based on the newly discovered boron-silicon junction. This kind of junction is built using the low-temperature chemical vapor deposition of amorphous boron onto n-type crystalline silicon (LT PureB process). As expected, the obtained results showed a significantly increased response time, compared with p-n junction photodetectors. Unexpectedly, a further increase in the response time was observed by applying a reverse-bias voltage, even though the junction capacitance decreased. A possible explanation for this phenomenon is the rapid increase in the sheet resistance of the single-atomic-Iayer boron-silicon interface on the surface of the photodetector, which exceeds the junction capacitance decrease.",

keywords = "boron-silicon junction, low-penetration radiation, photodetectors, response time",

author = "Roumen Nojdelov and Stoyan Nihtianov",

year = "2018",

doi = "10.1109/ICSENS.2018.8589914",

language = "English",

volume = "2018-October",

editor = "A. Roy and {Gianchandani }, Y.",

booktitle = "2018 IEEE SENSORS, SENSORS 2018 - Conference Proceedings",

publisher = "IEEE",

address = "United States",

note = "IEEE Sensors 2018 : 17th IEEE Sensors Conference ; Conference date: 28-10-2018 Through 31-10-2018",

}

TY - GEN

T1 - Response Time of Detectors Based on a Boron-Silicon Junction

AU - Nojdelov, Roumen

AU - Nihtianov, Stoyan

N1 - Conference code: 17

PY - 2018

Y1 - 2018

N2 - We report a study of the response time of detectors for low-penetration-depth radiation (deep ultra-violet photons, low-energy electrons), based on the newly discovered boron-silicon junction. This kind of junction is built using the low-temperature chemical vapor deposition of amorphous boron onto n-type crystalline silicon (LT PureB process). As expected, the obtained results showed a significantly increased response time, compared with p-n junction photodetectors. Unexpectedly, a further increase in the response time was observed by applying a reverse-bias voltage, even though the junction capacitance decreased. A possible explanation for this phenomenon is the rapid increase in the sheet resistance of the single-atomic-Iayer boron-silicon interface on the surface of the photodetector, which exceeds the junction capacitance decrease.

AB - We report a study of the response time of detectors for low-penetration-depth radiation (deep ultra-violet photons, low-energy electrons), based on the newly discovered boron-silicon junction. This kind of junction is built using the low-temperature chemical vapor deposition of amorphous boron onto n-type crystalline silicon (LT PureB process). As expected, the obtained results showed a significantly increased response time, compared with p-n junction photodetectors. Unexpectedly, a further increase in the response time was observed by applying a reverse-bias voltage, even though the junction capacitance decreased. A possible explanation for this phenomenon is the rapid increase in the sheet resistance of the single-atomic-Iayer boron-silicon interface on the surface of the photodetector, which exceeds the junction capacitance decrease.

KW - boron-silicon junction

KW - low-penetration radiation

KW - photodetectors

KW - response time

UR - http://www.scopus.com/inward/record.url?scp=85060880187&partnerID=8YFLogxK

U2 - 10.1109/ICSENS.2018.8589914

DO - 10.1109/ICSENS.2018.8589914

M3 - Conference contribution

AN - SCOPUS:85060880187

VL - 2018-October

BT - 2018 IEEE SENSORS, SENSORS 2018 - Conference Proceedings

A2 - Roy, A.

A2 - Gianchandani , Y.

PB - IEEE

T2 - IEEE Sensors 2018

Y2 - 28 October 2018 through 31 October 2018

ER -

Response Time of Detectors Based on a Boron-Silicon Junction

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