Response Time of Detectors Based on a Boron-Silicon Junction

Roumen Nojdelov, Stoyan Nihtianov

Research output: Chapter in Book/Conference proceedings/Edited volumeConference contributionScientificpeer-review

Abstract

We report a study of the response time of detectors for low-penetration-depth radiation (deep ultra-violet photons, low-energy electrons), based on the newly discovered boron-silicon junction. This kind of junction is built using the low-temperature chemical vapor deposition of amorphous boron onto n-type crystalline silicon (LT PureB process). As expected, the obtained results showed a significantly increased response time, compared with p-n junction photodetectors. Unexpectedly, a further increase in the response time was observed by applying a reverse-bias voltage, even though the junction capacitance decreased. A possible explanation for this phenomenon is the rapid increase in the sheet resistance of the single-atomic-Iayer boron-silicon interface on the surface of the photodetector, which exceeds the junction capacitance decrease.

Original languageEnglish
Title of host publication2018 IEEE SENSORS, SENSORS 2018 - Conference Proceedings
EditorsA. Roy, Y. Gianchandani
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Number of pages4
Volume2018-October
ISBN (Electronic)978-153864707-3
DOIs
Publication statusPublished - 2018
EventIEEE Sensors 2018: 17th IEEE Sensors Conference - Pullman Aerocity, New Delhi, India
Duration: 28 Oct 201831 Oct 2018
Conference number: 17

Conference

ConferenceIEEE Sensors 2018
CountryIndia
CityNew Delhi
Period28/10/1831/10/18

Keywords

  • boron-silicon junction
  • low-penetration radiation
  • photodetectors
  • response time

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  • Cite this

    Nojdelov, R., & Nihtianov, S. (2018). Response Time of Detectors Based on a Boron-Silicon Junction. In A. Roy, & Y. Gianchandani (Eds.), 2018 IEEE SENSORS, SENSORS 2018 - Conference Proceedings (Vol. 2018-October). [8589914] Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/ICSENS.2018.8589914