Restricted-access al-mediated material transport in al contacting of PureGaB Ge-on-Si p + n Diodes

A Sammak, L Qi, LK Nanver

Research output: Contribution to journalArticleScientificpeer-review

1 Citation (Scopus)
Original languageEnglish
Pages (from-to)4676-4683
Number of pages8
JournalJournal of Electronic Materials
Volume44
Issue number12
DOIs
Publication statusPublished - 2015

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