Restricted-access al-mediated material transport in al contacting of PureGaB Ge-on-Si p + n Diodes

A Sammak; L Qi; LK Nanver

doi:10.1007/s11664-015-4008-x

Restricted-access al-mediated material transport in al contacting of PureGaB Ge-on-Si p + n Diodes

A Sammak, L Qi, LK Nanver

Electronic Components, Technology and Materials

Research output: Contribution to journal › Article › Scientific › peer-review

3 Citations (Scopus)

Original language	English
Pages (from-to)	4676-4683
Number of pages	8
Journal	Journal of Electronic Materials
Volume	44
Issue number	12
DOIs	https://doi.org/10.1007/s11664-015-4008-x
Publication status	Published - 2015

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Harvest
Published online 24-9-2015

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10.1007/s11664-015-4008-x

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title = "Restricted-access al-mediated material transport in al contacting of PureGaB Ge-on-Si p + n Diodes",

author = "A Sammak and L Qi and LK Nanver",

note = "Harvest Published online 24-9-2015",

year = "2015",

doi = "10.1007/s11664-015-4008-x",

language = "English",

volume = "44",

pages = "4676--4683",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

publisher = "Springer",

number = "12",

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T1 - Restricted-access al-mediated material transport in al contacting of PureGaB Ge-on-Si p + n Diodes

AU - Sammak, A

AU - Qi, L

AU - Nanver, LK

N1 - Harvest Published online 24-9-2015

PY - 2015

Y1 - 2015

UR - http://resolver.tudelft.nl/uuid:dbaf35a5-b813-49b3-8c35-39de605ecefb

U2 - 10.1007/s11664-015-4008-x

DO - 10.1007/s11664-015-4008-x

M3 - Article

SN - 0361-5235

VL - 44

SP - 4676

EP - 4683

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 12

ER -

Restricted-access al-mediated material transport in al contacting of PureGaB Ge-on-Si p + n Diodes

Bibliographical note

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