Abstract
Silicon carbide (SiC) devices have shown definite advantages over Si counterparts in high-temperature, high-voltage, and high-frequency applications. To fully exploit the potentiality of SiC devices in high temperatures, die-attach materials that can withstand high temperatures for a long time are required in the power electronics packaging. In this article, the high-temperature die-attach materials, such as high-temperature solders and transient liquid-phase bonding materials, were reviewed first. Then, metallic (mainly Ag and Cu) nanoparticles (NPs) sintering technologies were thoroughly overviewed. The metallic NPs sintering materials, metallic NPs sintering process, and interface and reliability were analyzed, respectively. Finally, the challenges and outlook of promising Cu NPs sintering technology were discussed.
| Original language | English |
|---|---|
| Pages (from-to) | 13471-13486 |
| Number of pages | 16 |
| Journal | IEEE Transactions on Power Electronics |
| Volume | 39 |
| Issue number | 10 |
| DOIs | |
| Publication status | Published - 2024 |
Bibliographical note
Green Open Access added to TU Delft Institutional Repository 'You share, we take care!' - Taverne project https://www.openaccess.nl/en/you-share-we-take-careOtherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.
Keywords
- Bonding
- Conductivity
- Cu NPs sintering
- die-attach
- high-temperature
- Nickel
- power electronics packaging
- SiC devices
- Silicon carbide
- Sintering
- Substrates
- Thermal conductivity