TY - JOUR
T1 - Review of the recent progress on GaN-based vertical power Schottky barrier diodes (SBDs)
AU - Sun, Yue
AU - Kang, Xuanwu
AU - Zheng, Yingkui
AU - Lu, Jiang
AU - Tian, Xiaoli
AU - Wei, Ke
AU - Wu, Hao
AU - Wang, Wenbo
AU - Liu, Xinyu
AU - Zhang, Guoqi
PY - 2019
Y1 - 2019
N2 - Gallium nitride (GaN)-based vertical power Schottky barrier diode (SBD) has demonstrated outstanding features in high-frequency and high-power applications. This paper reviews recent progress on GaN-based vertical power SBDs, including the following sections. First, the benchmark for GaN vertical SBDs with different substrates (Si, sapphire, and GaN) are presented. Then, the latest progress in the edge terminal techniques are discussed. Finally, a typical fabrication flow of vertical GaN SBDs is also illustrated briefly.
AB - Gallium nitride (GaN)-based vertical power Schottky barrier diode (SBD) has demonstrated outstanding features in high-frequency and high-power applications. This paper reviews recent progress on GaN-based vertical power SBDs, including the following sections. First, the benchmark for GaN vertical SBDs with different substrates (Si, sapphire, and GaN) are presented. Then, the latest progress in the edge terminal techniques are discussed. Finally, a typical fabrication flow of vertical GaN SBDs is also illustrated briefly.
KW - Edge termination techniques
KW - GaN
KW - Schottky barrier diode (SBD)
KW - Vertical power devices
UR - http://www.scopus.com/inward/record.url?scp=85069735448&partnerID=8YFLogxK
U2 - 10.3390/electronics8050575
DO - 10.3390/electronics8050575
M3 - Review article
AN - SCOPUS:85069735448
VL - 8
SP - 1
EP - 15
JO - Electronics (Switzerland)
JF - Electronics (Switzerland)
IS - 5
M1 - 575
ER -