Review of the recent progress on GaN-based vertical power Schottky barrier diodes (SBDs)

Yue Sun; Xuanwu Kang; Yingkui Zheng; Jiang Lu; Xiaoli Tian; Ke Wei; Hao Wu; Wenbo Wang; Xinyu Liu; Guoqi Zhang

doi:10.3390/electronics8050575

Review of the recent progress on GaN-based vertical power Schottky barrier diodes (SBDs)

Yue Sun, Xuanwu Kang, Yingkui Zheng, Jiang Lu, Xiaoli Tian, Ke Wei, Hao Wu, Wenbo Wang, Xinyu Liu, Guoqi Zhang^*

^*Corresponding author for this work

Electronic Components, Technology and Materials

Research output: Contribution to journal › Review article › peer-review

86 Citations (SciVal)

258 Downloads (Pure)

Abstract

Gallium nitride (GaN)-based vertical power Schottky barrier diode (SBD) has demonstrated outstanding features in high-frequency and high-power applications. This paper reviews recent progress on GaN-based vertical power SBDs, including the following sections. First, the benchmark for GaN vertical SBDs with different substrates (Si, sapphire, and GaN) are presented. Then, the latest progress in the edge terminal techniques are discussed. Finally, a typical fabrication flow of vertical GaN SBDs is also illustrated briefly.

Original language	English
Article number	575
Pages (from-to)	1-15
Number of pages	15
Journal	Electronics (Switzerland)
Volume	8
Issue number	5
DOIs	https://doi.org/10.3390/electronics8050575
Publication status	Published - 2019

Keywords

Edge termination techniques
GaN
Schottky barrier diode (SBD)
Vertical power devices

Access to Document

10.3390/electronics8050575

electronics-08-00575-v2Final published version, 4.14 MBLicence: CC BY

Cite this

@article{6db72bfdc8a54cc3a63920768c8a0863,

title = "Review of the recent progress on GaN-based vertical power Schottky barrier diodes (SBDs)",

abstract = "Gallium nitride (GaN)-based vertical power Schottky barrier diode (SBD) has demonstrated outstanding features in high-frequency and high-power applications. This paper reviews recent progress on GaN-based vertical power SBDs, including the following sections. First, the benchmark for GaN vertical SBDs with different substrates (Si, sapphire, and GaN) are presented. Then, the latest progress in the edge terminal techniques are discussed. Finally, a typical fabrication flow of vertical GaN SBDs is also illustrated briefly.",

keywords = "Edge termination techniques, GaN, Schottky barrier diode (SBD), Vertical power devices",

author = "Yue Sun and Xuanwu Kang and Yingkui Zheng and Jiang Lu and Xiaoli Tian and Ke Wei and Hao Wu and Wenbo Wang and Xinyu Liu and Guoqi Zhang",

year = "2019",

doi = "10.3390/electronics8050575",

language = "English",

volume = "8",

pages = "1--15",

journal = "Electronics (Switzerland)",

publisher = "Multidisciplinary Digital Publishing Institute",

number = "5",

}

TY - JOUR

T1 - Review of the recent progress on GaN-based vertical power Schottky barrier diodes (SBDs)

AU - Sun, Yue

AU - Kang, Xuanwu

AU - Zheng, Yingkui

AU - Lu, Jiang

AU - Tian, Xiaoli

AU - Wei, Ke

AU - Wu, Hao

AU - Wang, Wenbo

AU - Liu, Xinyu

AU - Zhang, Guoqi

PY - 2019

Y1 - 2019

N2 - Gallium nitride (GaN)-based vertical power Schottky barrier diode (SBD) has demonstrated outstanding features in high-frequency and high-power applications. This paper reviews recent progress on GaN-based vertical power SBDs, including the following sections. First, the benchmark for GaN vertical SBDs with different substrates (Si, sapphire, and GaN) are presented. Then, the latest progress in the edge terminal techniques are discussed. Finally, a typical fabrication flow of vertical GaN SBDs is also illustrated briefly.

AB - Gallium nitride (GaN)-based vertical power Schottky barrier diode (SBD) has demonstrated outstanding features in high-frequency and high-power applications. This paper reviews recent progress on GaN-based vertical power SBDs, including the following sections. First, the benchmark for GaN vertical SBDs with different substrates (Si, sapphire, and GaN) are presented. Then, the latest progress in the edge terminal techniques are discussed. Finally, a typical fabrication flow of vertical GaN SBDs is also illustrated briefly.

KW - Edge termination techniques

KW - GaN

KW - Schottky barrier diode (SBD)

KW - Vertical power devices

UR - http://www.scopus.com/inward/record.url?scp=85069735448&partnerID=8YFLogxK

U2 - 10.3390/electronics8050575

DO - 10.3390/electronics8050575

M3 - Review article

AN - SCOPUS:85069735448

VL - 8

SP - 1

EP - 15

JO - Electronics (Switzerland)

JF - Electronics (Switzerland)

IS - 5

M1 - 575

ER -

Review of the recent progress on GaN-based vertical power Schottky barrier diodes (SBDs)

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this