RF-noise modeling in MOSFETs: Excess noise, symmetry, and causality

GDJ Smit, AJ Scholten, RMT Pijper, LF Tiemeijer, R van der Toorn, D.B.M. Klaassen, P Scheer, A Juge

Research output: Chapter in Book/Conference proceedings/Edited volumeConference contributionScientificpeer-review

Original languageEnglish
Title of host publicationNanotechnology 2014: MEMS, Fluidics, Bio Systems, Medical, Computational and Photonics
Editors s.n.
Place of PublicationLondon, UK
PublisherCRC Press
Pages503-507
Number of pages5
ISBN (Print)978-1-4822-5827-1
Publication statusPublished - 2014
EventNanotech 2014, Washington DC, USA - London, UK
Duration: 15 Jun 201418 Jun 2014

Publication series

Name
PublisherCRC

Conference

ConferenceNanotech 2014, Washington DC, USA
Period15/06/1418/06/14

Cite this

Smit, GDJ., Scholten, AJ., Pijper, RMT., Tiemeijer, LF., van der Toorn, R., Klaassen, D. B. M., Scheer, P., & Juge, A. (2014). RF-noise modeling in MOSFETs: Excess noise, symmetry, and causality. In s.n. (Ed.), Nanotechnology 2014: MEMS, Fluidics, Bio Systems, Medical, Computational and Photonics (pp. 503-507). CRC Press.