RF potential of a 0.18-um CMOS logic device technology

JN Burghartz, M Hargrove, C Webster, R Groves, M Keene, K Jenkins, R Logan, E Nowak

Research output: Contribution to journal › Article › Scientific › peer-review

70 Citations (SciVal)

Original language	Undefined/Unknown
Pages (from-to)	864-870
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	47
Issue number	4
Publication status	Published - 2000

Keywords

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title = "RF potential of a 0.18-um CMOS logic device technology",

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author = "JN Burghartz and M Hargrove and C Webster and R Groves and M Keene and K Jenkins and R Logan and E Nowak",

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TY - JOUR

T1 - RF potential of a 0.18-um CMOS logic device technology

AU - Burghartz, JN

AU - Hargrove, M

AU - Webster, C

AU - Groves, R

AU - Keene, M

AU - Jenkins, K

AU - Logan, R

AU - Nowak, E

PY - 2000

Y1 - 2000

KW - ZX Int.klas.verslagjaar < 2002

M3 - Article

SN - 0018-9383

VL - 47

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EP - 870

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 4

ER -