Ring-gate MOSFET test structures for measuring surface-charge-layer sheet resistance on high-resistivity-silicon substrates

SB Ir. Evseev; LK Nanver; S Milosavljevic

Ring-gate MOSFET test structures for measuring surface-charge-layer sheet resistance on high-resistivity-silicon substrates

SB Ir. Evseev, LK Nanver, S Milosavljevic

Electronic Components, Technology and Materials

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

11 Citations (Scopus)

Original language	Undefined/Unknown
Title of host publication	Proc. IEEE International Conference on Microelectronic Test Structures
Editors	s.n.
Place of Publication	Austin, USA
Publisher	Electron Device Society
Pages	3-8
Number of pages	6
ISBN (Print)	1-4244-0167-4
Publication status	Published - 2006
Event	IEEE International Conference on Microelectronic Test Structures - Austin, USA Duration: 6 Mar 2006 → 9 Mar 2006

Publication series

Name
Publisher	Electron Device Society

Conference

Conference	IEEE International Conference on Microelectronic Test Structures
Period	6/03/06 → 9/03/06

Keywords

conference contrib. refereed
Conf.proc. > 3 pag

Cite this

@inproceedings{3bbca448f0314a05a7a8bb5da6c1e534,

title = "Ring-gate MOSFET test structures for measuring surface-charge-layer sheet resistance on high-resistivity-silicon substrates",

keywords = "conference contrib. refereed, Conf.proc. > 3 pag",

author = "{Ir. Evseev}, SB and LK Nanver and S Milosavljevic",

year = "2006",

language = "Undefined/Unknown",

isbn = "1-4244-0167-4",

publisher = "Electron Device Society",

pages = "3--8",

editor = "s.n.",

booktitle = "Proc. IEEE International Conference on Microelectronic Test Structures",

note = "IEEE International Conference on Microelectronic Test Structures ; Conference date: 06-03-2006 Through 09-03-2006",

}

Ir. Evseev, SB, Nanver, LK & Milosavljevic, S 2006, Ring-gate MOSFET test structures for measuring surface-charge-layer sheet resistance on high-resistivity-silicon substrates. in s.n. (ed.), Proc. IEEE International Conference on Microelectronic Test Structures. Electron Device Society, Austin, USA, pp. 3-8, IEEE International Conference on Microelectronic Test Structures, 6/03/06.

Ring-gate MOSFET test structures for measuring surface-charge-layer sheet resistance on high-resistivity-silicon substrates. / Ir. Evseev, SB; Nanver, LK; Milosavljevic, S.
Proc. IEEE International Conference on Microelectronic Test Structures. ed. / s.n. Austin, USA: Electron Device Society, 2006. p. 3-8.

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

TY - GEN

T1 - Ring-gate MOSFET test structures for measuring surface-charge-layer sheet resistance on high-resistivity-silicon substrates

AU - Ir. Evseev, SB

AU - Nanver, LK

AU - Milosavljevic, S

PY - 2006

Y1 - 2006

KW - conference contrib. refereed

KW - Conf.proc. > 3 pag

M3 - Conference contribution

SN - 1-4244-0167-4

SP - 3

EP - 8

BT - Proc. IEEE International Conference on Microelectronic Test Structures

A2 - s.n., null

PB - Electron Device Society

CY - Austin, USA

T2 - IEEE International Conference on Microelectronic Test Structures

Y2 - 6 March 2006 through 9 March 2006

ER -