Room temperature GaAsSb array photodetectors

Ziyuan Li, Simeon Trendafilov, Monica Allen, Jeffery Allen, Ahmed Alabadla, Qian Gao, Xiaoming Yuan, Philippe Caroff, Hark Hoe Tan, More Authors

Research output: Chapter in Book/Conference proceedings/Edited volumeConference contributionScientificpeer-review

1 Citation (Scopus)

Abstract

GaAsSb nanowire arrays were grown by gold-seeded metalorganic vapor phase epitaxy (MOVPE) and fabricated into photodetector devices. The array photodetectors operate at room temperature with tunable resonance peaks varying with the array geometry. These devices are promising for multispectral photodetector applications.

Original languageEnglish
Title of host publicationRAPID 2018 - 2018 IEEE Research and Applications of Photonics In Defense Conference
EditorsMonica Allen, Jeffery Allen
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages143-145
Number of pages3
ISBN (Electronic)978-1-5386-5349-4
DOIs
Publication statusPublished - 2018
Event1st IEEE Research and Applications of Photonics In Defense Conference, RAPID 2018 - Mirimar Beach, United States
Duration: 22 Aug 201824 Aug 2018

Conference

Conference1st IEEE Research and Applications of Photonics In Defense Conference, RAPID 2018
CountryUnited States
CityMirimar Beach
Period22/08/1824/08/18

Keywords

  • GaAsSb
  • III-V semiconductor
  • nanowire
  • photodetector
  • VLS

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  • Cite this

    Li, Z., Trendafilov, S., Allen, M., Allen, J., Alabadla, A., Gao, Q., Yuan, X., Caroff, P., Tan, H. H., & More Authors (2018). Room temperature GaAsSb array photodetectors. In M. Allen, & J. Allen (Eds.), RAPID 2018 - 2018 IEEE Research and Applications of Photonics In Defense Conference (pp. 143-145). [8508949] Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/RAPID.2018.8508949