Room temperature GaAsSb array photodetectors

Ziyuan Li; Simeon Trendafilov; Monica Allen; Jeffery Allen; Ahmed Alabadla; Qian Gao; Xiaoming Yuan; Philippe Caroff; Hark Hoe Tan; null More Authors

doi:10.1109/RAPID.2018.8508949

Room temperature GaAsSb array photodetectors

Ziyuan Li, Simeon Trendafilov, Monica Allen, Jeffery Allen, Ahmed Alabadla, Qian Gao, Xiaoming Yuan, Philippe Caroff, Hark Hoe Tan, More Authors

QRD/Kouwenhoven Lab

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

1 Citation (Scopus)

Abstract

GaAsSb nanowire arrays were grown by gold-seeded metalorganic vapor phase epitaxy (MOVPE) and fabricated into photodetector devices. The array photodetectors operate at room temperature with tunable resonance peaks varying with the array geometry. These devices are promising for multispectral photodetector applications.

Original language	English
Title of host publication	RAPID 2018 - 2018 IEEE Research and Applications of Photonics In Defense Conference
Editors	Monica Allen, Jeffery Allen
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	143-145
Number of pages	3
ISBN (Electronic)	978-1-5386-5349-4
DOIs	https://doi.org/10.1109/RAPID.2018.8508949
Publication status	Published - 2018
Event	1st IEEE Research and Applications of Photonics In Defense Conference, RAPID 2018 - Mirimar Beach, United States Duration: 22 Aug 2018 → 24 Aug 2018

Conference

Conference	1st IEEE Research and Applications of Photonics In Defense Conference, RAPID 2018
Country/Territory	United States
City	Mirimar Beach
Period	22/08/18 → 24/08/18

Keywords

GaAsSb
III-V semiconductor
nanowire
photodetector
VLS

Access to Document

10.1109/RAPID.2018.8508949

Cite this

Li, Z., Trendafilov, S., Allen, M., Allen, J., Alabadla, A., Gao, Q., Yuan, X., Caroff, P., Tan, H. H., & More Authors (2018). Room temperature GaAsSb array photodetectors. In M. Allen, & J. Allen (Eds.), RAPID 2018 - 2018 IEEE Research and Applications of Photonics In Defense Conference (pp. 143-145). Article 8508949 Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/RAPID.2018.8508949

@inproceedings{fcad01cb86c948cda1e344c510d39dde,

title = "Room temperature GaAsSb array photodetectors",

abstract = "GaAsSb nanowire arrays were grown by gold-seeded metalorganic vapor phase epitaxy (MOVPE) and fabricated into photodetector devices. The array photodetectors operate at room temperature with tunable resonance peaks varying with the array geometry. These devices are promising for multispectral photodetector applications.",

keywords = "GaAsSb, III-V semiconductor, nanowire, photodetector, VLS",

author = "Ziyuan Li and Simeon Trendafilov and Monica Allen and Jeffery Allen and Ahmed Alabadla and Qian Gao and Xiaoming Yuan and Philippe Caroff and Tan, {Hark Hoe} and {More Authors}",

year = "2018",

doi = "10.1109/RAPID.2018.8508949",

language = "English",

pages = "143--145",

editor = "Monica Allen and Jeffery Allen",

booktitle = "RAPID 2018 - 2018 IEEE Research and Applications of Photonics In Defense Conference",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

note = "1st IEEE Research and Applications of Photonics In Defense Conference, RAPID 2018 ; Conference date: 22-08-2018 Through 24-08-2018",

}

Li, Z, Trendafilov, S, Allen, M, Allen, J, Alabadla, A, Gao, Q, Yuan, X, Caroff, P, Tan, HH & More Authors 2018, Room temperature GaAsSb array photodetectors. in M Allen & J Allen (eds), RAPID 2018 - 2018 IEEE Research and Applications of Photonics In Defense Conference., 8508949, Institute of Electrical and Electronics Engineers (IEEE), pp. 143-145, 1st IEEE Research and Applications of Photonics In Defense Conference, RAPID 2018, Mirimar Beach, United States, 22/08/18. https://doi.org/10.1109/RAPID.2018.8508949

Room temperature GaAsSb array photodetectors. / Li, Ziyuan; Trendafilov, Simeon; Allen, Monica et al.
RAPID 2018 - 2018 IEEE Research and Applications of Photonics In Defense Conference. ed. / Monica Allen; Jeffery Allen. Institute of Electrical and Electronics Engineers (IEEE), 2018. p. 143-145 8508949.

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

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T1 - Room temperature GaAsSb array photodetectors

AU - Li, Ziyuan

AU - Trendafilov, Simeon

AU - Allen, Monica

AU - Allen, Jeffery

AU - Alabadla, Ahmed

AU - Gao, Qian

AU - Yuan, Xiaoming

AU - Caroff, Philippe

AU - Tan, Hark Hoe

AU - More Authors, null

PY - 2018

Y1 - 2018

N2 - GaAsSb nanowire arrays were grown by gold-seeded metalorganic vapor phase epitaxy (MOVPE) and fabricated into photodetector devices. The array photodetectors operate at room temperature with tunable resonance peaks varying with the array geometry. These devices are promising for multispectral photodetector applications.

AB - GaAsSb nanowire arrays were grown by gold-seeded metalorganic vapor phase epitaxy (MOVPE) and fabricated into photodetector devices. The array photodetectors operate at room temperature with tunable resonance peaks varying with the array geometry. These devices are promising for multispectral photodetector applications.

KW - GaAsSb

KW - III-V semiconductor

KW - nanowire

KW - photodetector

KW - VLS

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DO - 10.1109/RAPID.2018.8508949

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EP - 145

BT - RAPID 2018 - 2018 IEEE Research and Applications of Photonics In Defense Conference

A2 - Allen, Monica

A2 - Allen, Jeffery

PB - Institute of Electrical and Electronics Engineers (IEEE)

T2 - 1st IEEE Research and Applications of Photonics In Defense Conference, RAPID 2018

Y2 - 22 August 2018 through 24 August 2018

ER -

Room temperature GaAsSb array photodetectors

Abstract

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Keywords

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