Room-temperature several-hundred-of-megahertz charge sensing with single-electron resolution using a silicon transistor

Katsuhiko Nishiguchi*, Hiroshi Yamaguchi, Akira Fujiwara, Herre S.J. Van Der Zant, Gary A. Steele

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

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We demonstrate charge detection with single-electron resolution at high readout frequency using a silicon field-effect transistor (FET) integrated with double resonant circuits. A FET, whose channel of 10-nm width enables a single electron to be detected at room temperature, is connected to resonant circuits composed of coupled inductors and capacitors, and these double resonant circuits provide two resonance frequencies. When the FET is driven by a carrier signal at the lower resonance frequency, a small signal applied to the FET's gate modulates the resonance condition, resulting in a reflected signal appearing near the higher resonance frequency. Such operation utilizing the double resonant circuits enables charge detection with a single-electron resolution of 3 × 10-3 e/Hz0.5 and a readout frequency of 200 MHz at room temperature. In addition, a variable capacitor used in the double resonant circuits allows charge-sensing characteristics to be controlled in situ.

Original languageEnglish
Article number043502
Number of pages5
JournalApplied Physics Letters
Issue number4
Publication statusPublished - 2023

Bibliographical note

Green Open Access added to TU Delft Institutional Repository ‘You share, we take care!’ – Taverne project Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public


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