TY - JOUR
T1 - Room-temperature several-hundred-of-megahertz charge sensing with single-electron resolution using a silicon transistor
AU - Nishiguchi, Katsuhiko
AU - Yamaguchi, Hiroshi
AU - Fujiwara, Akira
AU - Van Der Zant, Herre S.J.
AU - Steele, Gary A.
N1 - Green Open Access added to TU Delft Institutional Repository ‘You share, we take care!’ – Taverne project https://www.openaccess.nl/en/you-share-we-take-care Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public
PY - 2023
Y1 - 2023
N2 - We demonstrate charge detection with single-electron resolution at high readout frequency using a silicon field-effect transistor (FET) integrated with double resonant circuits. A FET, whose channel of 10-nm width enables a single electron to be detected at room temperature, is connected to resonant circuits composed of coupled inductors and capacitors, and these double resonant circuits provide two resonance frequencies. When the FET is driven by a carrier signal at the lower resonance frequency, a small signal applied to the FET's gate modulates the resonance condition, resulting in a reflected signal appearing near the higher resonance frequency. Such operation utilizing the double resonant circuits enables charge detection with a single-electron resolution of 3 × 10-3 e/Hz0.5 and a readout frequency of 200 MHz at room temperature. In addition, a variable capacitor used in the double resonant circuits allows charge-sensing characteristics to be controlled in situ.
AB - We demonstrate charge detection with single-electron resolution at high readout frequency using a silicon field-effect transistor (FET) integrated with double resonant circuits. A FET, whose channel of 10-nm width enables a single electron to be detected at room temperature, is connected to resonant circuits composed of coupled inductors and capacitors, and these double resonant circuits provide two resonance frequencies. When the FET is driven by a carrier signal at the lower resonance frequency, a small signal applied to the FET's gate modulates the resonance condition, resulting in a reflected signal appearing near the higher resonance frequency. Such operation utilizing the double resonant circuits enables charge detection with a single-electron resolution of 3 × 10-3 e/Hz0.5 and a readout frequency of 200 MHz at room temperature. In addition, a variable capacitor used in the double resonant circuits allows charge-sensing characteristics to be controlled in situ.
UR - http://www.scopus.com/inward/record.url?scp=85146913992&partnerID=8YFLogxK
U2 - 10.1063/5.0131808
DO - 10.1063/5.0131808
M3 - Article
AN - SCOPUS:85146913992
SN - 0003-6951
VL - 122
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 4
M1 - 043502
ER -