INIS
tungsten
100%
temperature range 0273-0400 k
100%
silicon
100%
indium oxides
100%
doped materials
100%
heterojunctions
100%
solar cells
100%
devices
66%
layers
50%
glass
50%
gain
33%
efficiency
33%
thin films
33%
magnetrons
16%
substrates
16%
magnesium fluorides
16%
sputtering
16%
carrier mobility
16%
simulation
16%
films
16%
comparative evaluations
16%
carrier density
16%
electrical properties
16%
performance
16%
stacks
16%
data
16%
radiowave radiation
16%
Material Science
Solar Cell
100%
Silicon
100%
Temperature
100%
Indium
100%
Oxide Compound
100%
Heterojunction
100%
Tungsten
100%
Devices
66%
Glass
50%
Carrier Concentration
16%
Film
16%
Magnesium
16%
Carrier Mobility
16%
Magnetron Sputtering
16%
Indium Tin Oxide
16%
Electrical Property
16%
Chemical Engineering
Oxide
100%
Silicon
100%
Indium
100%
Tungsten
100%
Temperature
100%
Magnesium
16%
Physics
Indium Oxides
100%
Heterojunction Device
33%