INIS
carrier density
16%
carrier mobility
16%
comparative evaluations
16%
data
16%
devices
66%
doped materials
100%
efficiency
33%
electrical properties
16%
films
16%
gain
33%
glass
50%
heterojunctions
100%
indium oxides
100%
layers
50%
magnesium fluorides
16%
magnetrons
16%
performance
16%
radiowave radiation
16%
silicon
100%
simulation
16%
solar cells
100%
sputtering
16%
stacks
16%
substrates
16%
temperature range 0273-0400 k
100%
thin films
33%
tungsten
100%
Material Science
Carrier Concentration
16%
Carrier Mobility
16%
Devices
66%
Electrical Property
16%
Film
16%
Glass
50%
Heterojunction
100%
Indium
100%
Indium Tin Oxide
16%
Magnesium
16%
Magnetron Sputtering
16%
Oxide Compound
100%
Silicon
100%
Solar Cell
100%
Temperature
100%
Tungsten
100%
Chemical Engineering
Indium
100%
Magnesium
16%
Oxide
100%
Silicon
100%
Temperature
100%
Tungsten
100%
Physics
Heterojunction Device
33%
Indium Oxides
100%