Schottky barrier height modulation by ultra-shallow low-dose dopant diffusion

M Popadic, LK Nanver, TLM Scholtes

Research output: Chapter in Book/Conference proceedings/Edited volumeConference contributionScientificpeer-review

Original languageUndefined/Unknown
Title of host publication8th International Conference on Solid-State and Integrated Circuit Technology Proceedings
Editors s.n.
Place of PublicationShanghai, China
PublisherElectron Device Society
Pages469-471
Number of pages3
ISBN (Print)1-4244-0160-7
Publication statusPublished - 2006
EventICSICT 2006: 8th International Conference on Solid-State and Integrated Circuit Technology - Shanghai, China
Duration: 23 Oct 200626 Oct 2006

Publication series

Name
PublisherElectron Device Society
Name
Volume4

Conference

ConferenceICSICT 2006
CountryChina
CityShanghai
Period23/10/0626/10/06

Keywords

  • conference contrib. refereed
  • Geen BTA classificatie

Cite this

Popadic, M., Nanver, LK., & Scholtes, TLM. (2006). Schottky barrier height modulation by ultra-shallow low-dose dopant diffusion. In s.n. (Ed.), 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings (pp. 469-471). Electron Device Society.