Screen printed Ag contacts for n-type polysilicon passivated contacts

Aditya Chaudhary*, Jan Hoß, Jan Lossen, Rene van Swaaij, Miro Zeman

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

10 Citations (Scopus)


We have printed firing through silver paste on n+ polysilicon passivated layer structures deposited by Low Pressure Chemical Vapor Deposition (LPCVD). We analysed recombination at the metal contacts by photoluminescence imaging of metallised lifetime samples and found for the best paste, metal semiconductor recombination current density values (J0met) below 100 fA/cm2. To our knowledge, these are among the lowest values reported so far for full size M2 wafers with 150 nm thin polysilicon layer. On samples metallised with standard commercial pastes for diffused emitters, we observed higher J0met values, while contact resistivity was acceptable for all samples. We also studied the effect of the peak firing temperature on the J0met and contact resistivity in this work. Further, we compared the impact of deep and shallow doping profiles on the passivation and the J0met values.

Original languageEnglish
Pages (from-to)040002-1 - 040002-8
Number of pages8
JournalAIP Conference Proceedings
Issue number1
Publication statusPublished - 27 Aug 2019
Event9th International Conference on Crystalline Silicon Photovoltaics, SiliconPV 2019 - Leuven, Belgium
Duration: 8 Apr 201910 Apr 2019


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