INIS
maps
100%
molecular beam epitaxy
100%
growth
100%
nanowires
100%
gallium arsenides
80%
indium arsenides
60%
substrates
40%
crystals
40%
devices
40%
surfaces
20%
indium phosphides
20%
kinetics
20%
nanostructures
20%
applications
20%
rings
20%
masks
20%
fabrication
20%
nanoelectronics
20%
range
20%
majorana spinors
20%
semiconductor materials
20%
proposals
20%
transport
20%
aharonov-bohm effect
20%
desorption
20%
space
20%
performance
20%
quantum computing
20%
orientation
20%
engineering
20%
Keyphrases
Quantum Nanowires
100%
Selectivity Maps
100%
Growth Parameters
20%
Aharonov-Bohm Ring
20%
Crystal Engineering
20%
Nanosized Crystals
20%
Compound Semiconductors
20%
Selective Area Growth
20%
Desorption Rate
20%
Improved Device
20%
GaAs(001)
20%
Space Window
20%
Homoepitaxial
20%
Network Growth
20%
Ring Test
20%
Material Science
Molecular Beam Epitaxy
100%
Nanowire
100%
Gallium Arsenide
80%
Devices
40%
Crystal Engineering
20%
Amorphous Material
20%
Compound Semiconductor
20%
Crystals
20%
Desorption
20%
Surface
20%
Characterization
20%