SIC JFET switching behavior in a drive inverter under influence of circuit parasitics

I Josifovic; J Popovi¿-Gerber; JA Ferreira

doi:10.1109/ICPE.2011.5944659

SIC JFET switching behavior in a drive inverter under influence of circuit parasitics

I Josifovic, J Popovi¿-Gerber, JA Ferreira

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

22 Citations (Scopus)

Abstract

This paper investigates the switching behaviour of normally-off SiC JFETs in an inverter for a motor drive. The parasitic ringing caused by different parasitic effects is analysed. Two different methods, the use of an RC snubber and the use of a ferrite bead, are proposed for dampening the parasitic oscillations. It is found that applying a ferrite bead not only dampens the parasitic oscillations but also results in significantly lower switching losses. Furthermore, it is shown that the capacitive coupling between SiC devices and heat sinks significantly deteriorates the JFETs' switching performance. The effect of two substrates, an IMS and a PCB, on the capacitive coupling is investigated. A method in which the use of two separate heat sinks minimises the capacitive coupling thus exploiting the full potential of fast SiC JFETs is proposed.

Original language	English
Title of host publication	Proceedings IEEE 8th International Conference on Power Electronics and ECCE Asia, 2011
Editors	S-K Sul
Publisher	IEEE Society
Pages	1087-1094
Number of pages	8
ISBN (Print)	978-1-61284-958-4
DOIs	https://doi.org/10.1109/ICPE.2011.5944659
Publication status	Published - 2011
Event	8th IEEE ICPE & ECCE Asia 2011 - Jeju, Korea, Democratic People's Republic of Duration: 30 May 2011 → 3 Jun 2011

Publication series

Name
Publisher	IEEE

Conference

Conference	8th IEEE ICPE & ECCE Asia 2011
Country/Territory	Korea, Democratic People's Republic of
City	Jeju
Period	30/05/11 → 3/06/11

Keywords

conference contrib. refereed
Conf.proc. > 3 pag

Access to Document

10.1109/ICPE.2011.5944659

Cite this

@inproceedings{4e1d0c933b31491e9c2e610a7274dd0d,

title = "SIC JFET switching behavior in a drive inverter under influence of circuit parasitics",

abstract = "This paper investigates the switching behaviour of normally-off SiC JFETs in an inverter for a motor drive. The parasitic ringing caused by different parasitic effects is analysed. Two different methods, the use of an RC snubber and the use of a ferrite bead, are proposed for dampening the parasitic oscillations. It is found that applying a ferrite bead not only dampens the parasitic oscillations but also results in significantly lower switching losses. Furthermore, it is shown that the capacitive coupling between SiC devices and heat sinks significantly deteriorates the JFETs' switching performance. The effect of two substrates, an IMS and a PCB, on the capacitive coupling is investigated. A method in which the use of two separate heat sinks minimises the capacitive coupling thus exploiting the full potential of fast SiC JFETs is proposed.",

keywords = "conference contrib. refereed, Conf.proc. > 3 pag",

author = "I Josifovic and J Popovi¿-Gerber and JA Ferreira",

year = "2011",

doi = "10.1109/ICPE.2011.5944659",

language = "English",

isbn = "978-1-61284-958-4",

publisher = "IEEE Society",

pages = "1087--1094",

editor = "S-K Sul",

booktitle = "Proceedings IEEE 8th International Conference on Power Electronics and ECCE Asia, 2011",

note = "8th IEEE ICPE & ECCE Asia 2011 ; Conference date: 30-05-2011 Through 03-06-2011",

}

Josifovic, I, Popovi¿-Gerber, J & Ferreira, JA 2011, SIC JFET switching behavior in a drive inverter under influence of circuit parasitics. in S-K Sul (ed.), Proceedings IEEE 8th International Conference on Power Electronics and ECCE Asia, 2011. IEEE Society, pp. 1087-1094, 8th IEEE ICPE & ECCE Asia 2011, Jeju, Korea, Democratic People's Republic of, 30/05/11. https://doi.org/10.1109/ICPE.2011.5944659

SIC JFET switching behavior in a drive inverter under influence of circuit parasitics. / Josifovic, I; Popovi¿-Gerber, J; Ferreira, JA.
Proceedings IEEE 8th International Conference on Power Electronics and ECCE Asia, 2011. ed. / S-K Sul. IEEE Society, 2011. p. 1087-1094.

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

TY - GEN

T1 - SIC JFET switching behavior in a drive inverter under influence of circuit parasitics

AU - Josifovic, I

AU - Popovi¿-Gerber, J

AU - Ferreira, JA

PY - 2011

Y1 - 2011

N2 - This paper investigates the switching behaviour of normally-off SiC JFETs in an inverter for a motor drive. The parasitic ringing caused by different parasitic effects is analysed. Two different methods, the use of an RC snubber and the use of a ferrite bead, are proposed for dampening the parasitic oscillations. It is found that applying a ferrite bead not only dampens the parasitic oscillations but also results in significantly lower switching losses. Furthermore, it is shown that the capacitive coupling between SiC devices and heat sinks significantly deteriorates the JFETs' switching performance. The effect of two substrates, an IMS and a PCB, on the capacitive coupling is investigated. A method in which the use of two separate heat sinks minimises the capacitive coupling thus exploiting the full potential of fast SiC JFETs is proposed.

AB - This paper investigates the switching behaviour of normally-off SiC JFETs in an inverter for a motor drive. The parasitic ringing caused by different parasitic effects is analysed. Two different methods, the use of an RC snubber and the use of a ferrite bead, are proposed for dampening the parasitic oscillations. It is found that applying a ferrite bead not only dampens the parasitic oscillations but also results in significantly lower switching losses. Furthermore, it is shown that the capacitive coupling between SiC devices and heat sinks significantly deteriorates the JFETs' switching performance. The effect of two substrates, an IMS and a PCB, on the capacitive coupling is investigated. A method in which the use of two separate heat sinks minimises the capacitive coupling thus exploiting the full potential of fast SiC JFETs is proposed.

KW - conference contrib. refereed

KW - Conf.proc. > 3 pag

U2 - 10.1109/ICPE.2011.5944659

DO - 10.1109/ICPE.2011.5944659

M3 - Conference contribution

SN - 978-1-61284-958-4

SP - 1087

EP - 1094

BT - Proceedings IEEE 8th International Conference on Power Electronics and ECCE Asia, 2011

A2 - Sul, S-K

PB - IEEE Society

T2 - 8th IEEE ICPE & ECCE Asia 2011

Y2 - 30 May 2011 through 3 June 2011

ER -

SIC JFET switching behavior in a drive inverter under influence of circuit parasitics

Abstract

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Conference

Keywords

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