Side Gate Tunable Josephson Junctions at the LaAlO3/SrTiO3 Interface

Mafalda RinconVieiraLugarinhoMonteiro, D. J. Groenendijk, N. Manca, E. Mulazimoglu, S. Goswami, Yaroslav Blanter, L. M K Vandersypen, A. D. Caviglia

Research output: Contribution to journalArticleScientificpeer-review

29 Citations (Scopus)
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Novel physical phenomena arising at the interface of complex oxide heterostructures offer exciting opportunities for the development of future electronic devices. Using the prototypical LaAlO3/SrTiO3 interface as a model system, we employ a single-step lithographic process to realize gate-tunable Josephson junctions through a combination of lateral confinement and local side gating. The action of the side gates is found to be comparable to that of a local back gate, constituting a robust and efficient way to control the properties of the interface at the nanoscale. We demonstrate that the side gates enable reliable tuning of both the normal-state resistance and the critical (Josephson) current of the constrictions. The conductance and Josephson current show mesoscopic fluctuations as a function of the applied side gate voltage, and the analysis of their amplitude enables the extraction of the phase coherence and thermal lengths. Finally, we realize a superconducting quantum interference device in which the critical currents of each of the constriction-type Josephson junctions can be controlled independently via the side gates.

Original languageEnglish
Pages (from-to)715-720
Number of pages6
JournalNano Letters: a journal dedicated to nanoscience and nanotechnology
Issue number2
Publication statusPublished - 8 Feb 2017


  • field-effect
  • Josephson junction
  • Oxide heterostructures
  • side gates


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