Side Gate Tunable Josephson Junctions at the LaAlO3/SrTiO3 Interface

Mafalda RinconVieiraLugarinhoMonteiro, D. J. Groenendijk, N. Manca, E. Mulazimoglu, S. Goswami, Yaroslav Blanter, L. M K Vandersypen, A. D. Caviglia

Research output: Contribution to journalArticleScientificpeer-review

18 Citations (Scopus)
22 Downloads (Pure)

Abstract

Novel physical phenomena arising at the interface of complex oxide heterostructures offer exciting opportunities for the development of future electronic devices. Using the prototypical LaAlO3/SrTiO3 interface as a model system, we employ a single-step lithographic process to realize gate-tunable Josephson junctions through a combination of lateral confinement and local side gating. The action of the side gates is found to be comparable to that of a local back gate, constituting a robust and efficient way to control the properties of the interface at the nanoscale. We demonstrate that the side gates enable reliable tuning of both the normal-state resistance and the critical (Josephson) current of the constrictions. The conductance and Josephson current show mesoscopic fluctuations as a function of the applied side gate voltage, and the analysis of their amplitude enables the extraction of the phase coherence and thermal lengths. Finally, we realize a superconducting quantum interference device in which the critical currents of each of the constriction-type Josephson junctions can be controlled independently via the side gates.

Original languageEnglish
Pages (from-to)715-720
Number of pages6
JournalNano Letters: a journal dedicated to nanoscience and nanotechnology
Volume17
Issue number2
DOIs
Publication statusPublished - 8 Feb 2017

Keywords

  • field-effect
  • Josephson junction
  • Oxide heterostructures
  • side gates
  • SQUID

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