The thermal-piezoresistive effect in silicon (Si) has attracted great attention toward high-performance resonant devices but still faces major challenges for harsh environment applications. Instead of using Si, this paper, for the first time, reports a thermal-piezoresistive resonator based on a silicon carbide-on-insulator (SiCOI) platform. The resonance frequency simulation, CMOS-compatible fabrication, and thermoresistive properties characterization of the proposed SiCOI resonator are presented. The experimental results show linear current-voltage characteristics and a constant temperature coefficient of resistance (TCR) up to 200 °C.
|Title of host publication||Proceedings of the 2023 IEEE 36th International Conference on Micro Electro Mechanical Systems (MEMS)|
|Place of Publication||Danvers|
|Number of pages||4|
|Publication status||Published - 2023|
|Event||2023 IEEE 36th International Conference on Micro Electro Mechanical Systems (MEMS) - Munich, Germany|
Duration: 15 Jan 2023 → 19 Jan 2023
Conference number: 36th
|Conference||2023 IEEE 36th International Conference on Micro Electro Mechanical Systems (MEMS)|
|Period||15/01/23 → 19/01/23|
Bibliographical noteGreen Open Access added to TU Delft Institutional Repository 'You share, we take care!' - Taverne project https://www.openaccess.nl/en/you-share-we-take-care
Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.
- Silicon carbide-on-insulator
- harsh environment