Silicon carbide-on-insulator thermal-piezoresistive resonator for harsh environment application

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18 Downloads (Pure)

Abstract

The thermal-piezoresistive effect in silicon (Si) has attracted great attention toward high-performance resonant devices but still faces major challenges for harsh environment applications. Instead of using Si, this paper, for the first time, reports a thermal-piezoresistive resonator based on a silicon carbide-on-insulator (SiCOI) platform. The resonance frequency simulation, CMOS-compatible fabrication, and thermoresistive properties characterization of the proposed SiCOI resonator are presented. The experimental results show linear current-voltage characteristics and a constant temperature coefficient of resistance (TCR) up to 200 °C.
Original languageEnglish
Title of host publicationProceedings of the 2023 IEEE 36th International Conference on Micro Electro Mechanical Systems (MEMS)
Place of PublicationDanvers
PublisherIEEE
Pages621-624
Number of pages4
ISBN (Electronic)978-1-6654-9308-6
ISBN (Print)978-1-6654-9309-3
DOIs
Publication statusPublished - 2023
Event2023 IEEE 36th International Conference on Micro Electro Mechanical Systems (MEMS) - Munich, Germany
Duration: 15 Jan 202319 Jan 2023
Conference number: 36th

Conference

Conference2023 IEEE 36th International Conference on Micro Electro Mechanical Systems (MEMS)
Country/TerritoryGermany
CityMunich
Period15/01/2319/01/23

Bibliographical note

Green Open Access added to TU Delft Institutional Repository 'You share, we take care!' - Taverne project https://www.openaccess.nl/en/you-share-we-take-care
Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.

Keywords

  • Silicon carbide-on-insulator
  • thermal-piezoresistive
  • resonator
  • harsh environment

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