Silicon carbide-on-insulator thermal-piezoresistive resonator for harsh environment application

Baoyun Sun; Jiarui Mo; Hemin  Zhang; Henk W. van Zeijl; Willem D. van Driel; Guoqi Zhang

doi:10.1109/MEMS49605.2023.10052401

Silicon carbide-on-insulator thermal-piezoresistive resonator for harsh environment application

Baoyun Sun, Jiarui Mo, Hemin Zhang, Henk W. van Zeijl, Willem D. van Driel, Guoqi Zhang

Electronic Components, Technology and Materials

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

2 Citations (Scopus)

18 Downloads (Pure)

Abstract

The thermal-piezoresistive effect in silicon (Si) has attracted great attention toward high-performance resonant devices but still faces major challenges for harsh environment applications. Instead of using Si, this paper, for the first time, reports a thermal-piezoresistive resonator based on a silicon carbide-on-insulator (SiCOI) platform. The resonance frequency simulation, CMOS-compatible fabrication, and thermoresistive properties characterization of the proposed SiCOI resonator are presented. The experimental results show linear current-voltage characteristics and a constant temperature coefficient of resistance (TCR) up to 200 °C.

Original language	English
Title of host publication	Proceedings of the 2023 IEEE 36th International Conference on Micro Electro Mechanical Systems (MEMS)
Place of Publication	Danvers
Publisher	IEEE
Pages	621-624
Number of pages	4
ISBN (Electronic)	978-1-6654-9308-6
ISBN (Print)	978-1-6654-9309-3
DOIs	https://doi.org/10.1109/MEMS49605.2023.10052401
Publication status	Published - 2023
Event	2023 IEEE 36th International Conference on Micro Electro Mechanical Systems (MEMS) - Munich, Germany Duration: 15 Jan 2023 → 19 Jan 2023 Conference number: 36th

Conference

Conference	2023 IEEE 36th International Conference on Micro Electro Mechanical Systems (MEMS)
Country/Territory	Germany
City	Munich
Period	15/01/23 → 19/01/23

Bibliographical note

Green Open Access added to TU Delft Institutional Repository 'You share, we take care!' - Taverne project https://www.openaccess.nl/en/you-share-we-take-care
Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.

Keywords

Silicon carbide-on-insulator
thermal-piezoresistive
resonator
harsh environment

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10.1109/MEMS49605.2023.10052401

Silicon_Carbide-on-Insulator_Thermal-Piezoresistive_Resonator_for_Harsh_Environment_ApplicationFinal published version, 2 MB

Cite this

@inproceedings{6dc717120a4c4ba5b25355131d774027,

title = "Silicon carbide-on-insulator thermal-piezoresistive resonator for harsh environment application",

abstract = "The thermal-piezoresistive effect in silicon (Si) has attracted great attention toward high-performance resonant devices but still faces major challenges for harsh environment applications. Instead of using Si, this paper, for the first time, reports a thermal-piezoresistive resonator based on a silicon carbide-on-insulator (SiCOI) platform. The resonance frequency simulation, CMOS-compatible fabrication, and thermoresistive properties characterization of the proposed SiCOI resonator are presented. The experimental results show linear current-voltage characteristics and a constant temperature coefficient of resistance (TCR) up to 200 °C.",

keywords = "Silicon carbide-on-insulator, thermal-piezoresistive, resonator, harsh environment",

author = "Baoyun Sun and Jiarui Mo and Hemin Zhang and {van Zeijl}, {Henk W.} and {van Driel}, {Willem D.} and Guoqi Zhang",

note = "Green Open Access added to TU Delft Institutional Repository 'You share, we take care!' - Taverne project https://www.openaccess.nl/en/you-share-we-take-care Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.; 2023 IEEE 36th International Conference on Micro Electro Mechanical Systems (MEMS) ; Conference date: 15-01-2023 Through 19-01-2023",

year = "2023",

doi = "10.1109/MEMS49605.2023.10052401",

language = "English",

isbn = "978-1-6654-9309-3",

pages = "621--624",

booktitle = "Proceedings of the 2023 IEEE 36th International Conference on Micro Electro Mechanical Systems (MEMS)",

publisher = "IEEE",

address = "United States",

}

Sun, B , Mo, J, Zhang, H, van Zeijl, HW , van Driel, WD & Zhang, G 2023, Silicon carbide-on-insulator thermal-piezoresistive resonator for harsh environment application. in Proceedings of the 2023 IEEE 36th International Conference on Micro Electro Mechanical Systems (MEMS). IEEE, Danvers, pp. 621-624, 2023 IEEE 36th International Conference on Micro Electro Mechanical Systems (MEMS), Munich, Germany, 15/01/23. https://doi.org/10.1109/MEMS49605.2023.10052401

Silicon carbide-on-insulator thermal-piezoresistive resonator for harsh environment application. / Sun, Baoyun ; Mo, Jiarui; Zhang, Hemin et al.
Proceedings of the 2023 IEEE 36th International Conference on Micro Electro Mechanical Systems (MEMS). Danvers: IEEE, 2023. p. 621-624.

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

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T1 - Silicon carbide-on-insulator thermal-piezoresistive resonator for harsh environment application

AU - Sun, Baoyun

AU - Mo, Jiarui

AU - Zhang, Hemin

AU - van Zeijl, Henk W.

AU - van Driel, Willem D.

AU - Zhang, Guoqi

N1 - Conference code: 36th

PY - 2023

Y1 - 2023

N2 - The thermal-piezoresistive effect in silicon (Si) has attracted great attention toward high-performance resonant devices but still faces major challenges for harsh environment applications. Instead of using Si, this paper, for the first time, reports a thermal-piezoresistive resonator based on a silicon carbide-on-insulator (SiCOI) platform. The resonance frequency simulation, CMOS-compatible fabrication, and thermoresistive properties characterization of the proposed SiCOI resonator are presented. The experimental results show linear current-voltage characteristics and a constant temperature coefficient of resistance (TCR) up to 200 °C.

AB - The thermal-piezoresistive effect in silicon (Si) has attracted great attention toward high-performance resonant devices but still faces major challenges for harsh environment applications. Instead of using Si, this paper, for the first time, reports a thermal-piezoresistive resonator based on a silicon carbide-on-insulator (SiCOI) platform. The resonance frequency simulation, CMOS-compatible fabrication, and thermoresistive properties characterization of the proposed SiCOI resonator are presented. The experimental results show linear current-voltage characteristics and a constant temperature coefficient of resistance (TCR) up to 200 °C.

KW - Silicon carbide-on-insulator

KW - thermal-piezoresistive

KW - resonator

KW - harsh environment

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EP - 624

BT - Proceedings of the 2023 IEEE 36th International Conference on Micro Electro Mechanical Systems (MEMS)

PB - IEEE

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T2 - 2023 IEEE 36th International Conference on Micro Electro Mechanical Systems (MEMS)

Y2 - 15 January 2023 through 19 January 2023

ER -

Silicon carbide-on-insulator thermal-piezoresistive resonator for harsh environment application

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Keywords

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