Silicon Nitride MOMS Oscillator for Room Temperature Quantum Optomechanics

Enrico Serra, Bruno Morana, Antonio Borrielli, Francesco Marin, Gregory Pandraud, Antonio Pontin, Giovanni Andrea Prodi, Pasqualina M. Sarro, Michele Bonaldi

Research output: Contribution to journalArticleScientificpeer-review

4 Citations (Scopus)

Abstract

Optomechanical SiN nano-oscillators in high-finesse Fabry-Perot cavities can be used to investigate the interaction between mechanical and optical degree of freedom for ultra-sensitive metrology and fundamental quantum mechanical studies. In this paper, we present a nano-oscillator made of a high-stress round-shaped SiN membrane with an integrated on-chip 3-D acoustic shield properly designed to reduce mechanical losses. This oscillator works in the range of 200 kHz to 5 MHz and features a mechanical quality factor of Q ≃ 107 and a Q-frequency product in excess of 6.2 × 1012 Hz at room temperature, fulfilling the minimum requirement for quantum ground-state cooling of the oscillator in an optomechanical cavity. The device is obtained by MEMS deep reactive-ion etching (DRIE) bulk micromachining with a two-side silicon processing on a silicon-on-insulator wafer. The microfabrication process is quite flexible such that additional layers could be deposited over the SiN membrane before the DRIE steps, if required for a sensing application. Therefore, such oscillator is a promising candidate for quantum sensing applications in the context of the emerging field of quantum technologies. 

Original languageEnglish
Article number8520914
Pages (from-to)1193-1203
Number of pages11
JournalJournal of Microelectromechanical Systems
Volume27
Issue number6
DOIs
Publication statusPublished - 2018

Keywords

  • MOMS oscillator
  • quantum optomechanics
  • reactive ion etching
  • SiN thin membrane

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