INIS
electrons
100%
roughness
100%
simulation
100%
walls
100%
resist
100%
layers
75%
substrates
50%
interfaces
37%
images
37%
doses
25%
solubility
25%
monte carlo method
25%
beams
25%
size
25%
length
25%
surfaces
12%
width
12%
distribution
12%
diffusion
12%
scattering
12%
interactions
12%
silicon
12%
height
12%
investigations
12%
simulators
12%
kev range
12%
depth
12%
Earth and Planetary Sciences
Lithography
100%
Wall
100%
Side
100%
Electron
100%
Roughness
100%
Substrate
80%
Image
60%
Edge
40%
Miscibility
40%
Average
40%
Dosage
40%
Assumption
20%
Silicon
20%
Investigation
20%
Purpose
20%
Standard Deviation
20%
Boundary
20%
Depth
20%
Record
20%
Stem
20%
Scanning
20%
Physics
Substrates
100%
Images
75%
Monte Carlo
50%
Solubility
50%
Calculation
25%
Gaussian Distribution
25%
Boundaries
25%
Deviation
25%
Standard
25%
Silicon
25%
Material Science
Surface Roughness
100%
Lithography
100%
Silicon
25%
Surface
25%