INIS
crystal defects
100%
pulses
100%
sequence analysis
50%
air
50%
power
50%
psychological behavior
50%
indicators
50%
applications
50%
voltage
50%
processing
50%
diagrams
50%
measuring methods
50%
comparative evaluations
50%
plates
50%
defects
50%
sensors
50%
configuration
50%
data
50%
electrodes
50%
Keyphrases
Plane Defect
100%
DC Partial Discharge
100%
Point-to-plane
100%
UHF Measurements
100%
DC Discharge
50%
UHF Method
50%
Insulation Deterioration
50%
Voltage Polarity
50%
Needle Electrode
50%
Pulse Sequence Analysis
50%
Electrical Method
50%
UHF Sensor
50%
Physics
Plane
100%
Pulse
100%
Electrode
50%
Knowledge
50%
Area
50%
Stress Distribution
50%
Utilization
50%
Air
50%
Magnitude
50%
Electric Potential
50%
Needle
50%
Behavior
50%
Deterioration
50%
Engineering
Measurement
100%
Defects
100%
Polarity
25%
Application
25%
Sensor
25%
Processing
25%
Stress Field
25%
Repetition Rate
25%
Computational Power
25%
Measuring Method
25%
Voltage
25%