Simultaneous through-silicon via and large cavity formation using deep reactive ion etching and aluminum etch-stop layer

J Tian; M Bartek

Simultaneous through-silicon via and large cavity formation using deep reactive ion etching and aluminum etch-stop layer

J Tian, M Bartek

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific

Original language	Undefined/Unknown
Title of host publication	2008 Proceedings 58th electronic components & technology conference, Lake Buena Vista, FL, USA
Editors	Wipiejewski, T., Trewhella, J.
Place of Publication	Orlando, FL, USA
Publisher	IEEE Society
Pages	1787-1992
Number of pages	206
ISBN (Print)	978-1-4244-2231-9
Publication status	Published - 2008
Event	58th Electronic Components & Technology Conference, Lake Buena Vista, FL, USA - Orlando, FL, USA Duration: 27 May 2008 → 30 May 2008

Publication series

Name
Publisher	IEEE

Conference

Conference	58th Electronic Components & Technology Conference, Lake Buena Vista, FL, USA
Period	27/05/08 → 30/05/08

Keywords

conference contrib. refereed
Conf.proc. > 3 pag

Cite this

@inproceedings{9f03212b1cb04033a3cf97d66b567ae8,

title = "Simultaneous through-silicon via and large cavity formation using deep reactive ion etching and aluminum etch-stop layer",

keywords = "conference contrib. refereed, Conf.proc. > 3 pag",

author = "J Tian and M Bartek",

year = "2008",

language = "Undefined/Unknown",

isbn = "978-1-4244-2231-9",

publisher = "IEEE Society",

pages = "1787--1992",

editor = "{Wipiejewski, T.} and {Trewhella, J.}",

booktitle = "2008 Proceedings 58th electronic components & technology conference, Lake Buena Vista, FL, USA",

note = "null ; Conference date: 27-05-2008 Through 30-05-2008",

}

Tian, J & Bartek, M 2008, Simultaneous through-silicon via and large cavity formation using deep reactive ion etching and aluminum etch-stop layer. in Wipiejewski, T. & Trewhella, J. (eds), 2008 Proceedings 58th electronic components & technology conference, Lake Buena Vista, FL, USA. IEEE Society, Orlando, FL, USA, pp. 1787-1992, 58th Electronic Components & Technology Conference, Lake Buena Vista, FL, USA, 27/05/08.

Simultaneous through-silicon via and large cavity formation using deep reactive ion etching and aluminum etch-stop layer. / Tian, J; Bartek, M.

2008 Proceedings 58th electronic components & technology conference, Lake Buena Vista, FL, USA. ed. / Wipiejewski, T.; Trewhella, J. Orlando, FL, USA : IEEE Society, 2008. p. 1787-1992.

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific

TY - GEN

T1 - Simultaneous through-silicon via and large cavity formation using deep reactive ion etching and aluminum etch-stop layer

AU - Tian, J

AU - Bartek, M

PY - 2008

Y1 - 2008

KW - conference contrib. refereed

KW - Conf.proc. > 3 pag

M3 - Conference contribution

SN - 978-1-4244-2231-9

SP - 1787

EP - 1992

BT - 2008 Proceedings 58th electronic components & technology conference, Lake Buena Vista, FL, USA

A2 - Wipiejewski, T., null

A2 - Trewhella, J., null

PB - IEEE Society

CY - Orlando, FL, USA

Y2 - 27 May 2008 through 30 May 2008

ER -