@inproceedings{8a57c41f3e884491bc89aa7d2b718133,
title = "Single-crystalline Si CMOS TFT circuit fabricated inside a location-controlled grain by m-Czochralski process",
keywords = "Vakpubl., Overig wet. > 3 pag",
author = "V Rana and R Ishihara and Y Hiroshima and D Abe and S Inoue and T Shimoda and JW Metselaar and CIM Beenakker",
year = "2004",
language = "Undefined/Unknown",
isbn = "90-73461-43-X",
publisher = "STW Technology Foundation",
pages = "662--665",
editor = "W Krautschneider and C Claeys",
booktitle = "Proceedings of the 7th Annual Workshop on Semiconductor Advances for Future Electronics (SAFE)",
note = "7th Annual Workshop on Semiconductor Advances for Future Electronics (SAFE), Veldhoven, the Netherlands ; Conference date: 25-11-2004 Through 26-11-2004",
}