Single, double, and triple quantum dots in Ge/Si nanowires

F. N.M. Froning, M. K. Rehmann, J. Ridderbos, M. Brauns, F. A. Zwanenburg, A. Li, E. P.A.M. Bakkers, D. M. Zumbühl, F. R. Braakman*

*Corresponding author for this work

    Research output: Contribution to journalArticleScientificpeer-review

    18 Citations (Scopus)
    18 Downloads (Pure)

    Abstract

    We report highly tunable control of holes in Ge/Si core/shell nanowires. We demonstrate the ability to create single quantum dots of various sizes, with low hole occupation numbers and clearly observable excited states. For the smallest dot size, we observe indications of single-hole occupation. Moreover, we create double and triple tunnel-coupled quantum dot arrays. In the double quantum dot configuration, we observe Pauli spin blockade. These results open the way to perform hole spin qubit experiments in these devices.

    Original languageEnglish
    Article number073102
    JournalApplied Physics Letters
    Volume113
    Issue number7
    DOIs
    Publication statusPublished - Aug 2018

    Fingerprint

    Dive into the research topics of 'Single, double, and triple quantum dots in Ge/Si nanowires'. Together they form a unique fingerprint.

    Cite this