Single, double, and triple quantum dots in Ge/Si nanowires

F. N.M. Froning; M. K. Rehmann; J. Ridderbos; M. Brauns; F. A. Zwanenburg; A. Li; E. P.A.M. Bakkers; D. M. Zumbühl; F. R. Braakman

doi:10.1063/1.5042501

Single, double, and triple quantum dots in Ge/Si nanowires

F. N.M. Froning, M. K. Rehmann, J. Ridderbos, M. Brauns, F. A. Zwanenburg, A. Li, E. P.A.M. Bakkers, D. M. Zumbühl, F. R. Braakman^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › Scientific › peer-review

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Abstract

We report highly tunable control of holes in Ge/Si core/shell nanowires. We demonstrate the ability to create single quantum dots of various sizes, with low hole occupation numbers and clearly observable excited states. For the smallest dot size, we observe indications of single-hole occupation. Moreover, we create double and triple tunnel-coupled quantum dot arrays. In the double quantum dot configuration, we observe Pauli spin blockade. These results open the way to perform hole spin qubit experiments in these devices.

Original language	English
Article number	073102
Journal	Applied Physics Letters
Volume	113
Issue number	7
DOIs	https://doi.org/10.1063/1.5042501
Publication status	Published - Aug 2018

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title = "Single, double, and triple quantum dots in Ge/Si nanowires",

abstract = "We report highly tunable control of holes in Ge/Si core/shell nanowires. We demonstrate the ability to create single quantum dots of various sizes, with low hole occupation numbers and clearly observable excited states. For the smallest dot size, we observe indications of single-hole occupation. Moreover, we create double and triple tunnel-coupled quantum dot arrays. In the double quantum dot configuration, we observe Pauli spin blockade. These results open the way to perform hole spin qubit experiments in these devices.",

author = "Froning, {F. N.M.} and Rehmann, {M. K.} and J. Ridderbos and M. Brauns and Zwanenburg, {F. A.} and A. Li and Bakkers, {E. P.A.M.} and Zumb{\"u}hl, {D. M.} and Braakman, {F. R.}",

year = "2018",

month = aug,

doi = "10.1063/1.5042501",

language = "English",

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T1 - Single, double, and triple quantum dots in Ge/Si nanowires

AU - Froning, F. N.M.

AU - Rehmann, M. K.

AU - Ridderbos, J.

AU - Brauns, M.

AU - Zwanenburg, F. A.

AU - Li, A.

AU - Bakkers, E. P.A.M.

AU - Zumbühl, D. M.

AU - Braakman, F. R.

PY - 2018/8

Y1 - 2018/8

N2 - We report highly tunable control of holes in Ge/Si core/shell nanowires. We demonstrate the ability to create single quantum dots of various sizes, with low hole occupation numbers and clearly observable excited states. For the smallest dot size, we observe indications of single-hole occupation. Moreover, we create double and triple tunnel-coupled quantum dot arrays. In the double quantum dot configuration, we observe Pauli spin blockade. These results open the way to perform hole spin qubit experiments in these devices.

AB - We report highly tunable control of holes in Ge/Si core/shell nanowires. We demonstrate the ability to create single quantum dots of various sizes, with low hole occupation numbers and clearly observable excited states. For the smallest dot size, we observe indications of single-hole occupation. Moreover, we create double and triple tunnel-coupled quantum dot arrays. In the double quantum dot configuration, we observe Pauli spin blockade. These results open the way to perform hole spin qubit experiments in these devices.

UR - http://resolver.tudelft.nl/uuid:37318757-8cce-4de0-9025-3adedd26c492

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VL - 113

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 7

M1 - 073102

ER -

Single, double, and triple quantum dots in Ge/Si nanowires

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