Single-Electron Occupation in Quantum Dot Arrays at Selectable Plunger Gate Voltage

Marcel Meyer; Corentin Déprez; Ilja N. Meijer; Florian K. Unseld; Saurabh Karwal; Amir Sammak; Giordano Scappucci; Lieven M.K. Vandersypen; Menno Veldhorst

doi:10.1021/acs.nanolett.3c03349

Single-Electron Occupation in Quantum Dot Arrays at Selectable Plunger Gate Voltage

Marcel Meyer, Corentin Déprez, Ilja N. Meijer, Florian K. Unseld, Saurabh Karwal, Amir Sammak, Giordano Scappucci, Lieven M.K. Vandersypen, Menno Veldhorst^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › Scientific › peer-review

32 Downloads (Pure)

Abstract

The small footprint of semiconductor qubits is favorable for scalable quantum computing. However, their size also makes them sensitive to their local environment and variations in the gate structure. Currently, each device requires tailored gate voltages to confine a single charge per quantum dot, clearly challenging scalability. Here, we tune these gate voltages and equalize them solely through the temporary application of stress voltages. In a double quantum dot, we reach a stable (1,1) charge state at identical and predetermined plunger gate voltage and for various interdot couplings. Applying our findings, we tune a 2 × 2 quadruple quantum dot such that the (1,1,1,1) charge state is reached when all plunger gates are set to 1 V. The ability to define required gate voltages may relax requirements on control electronics and operations for spin qubit devices, providing means to advance quantum hardware.

Original language	English
Pages (from-to)	11593-11600
Number of pages	8
Journal	Nano Letters
Volume	23
Issue number	24
DOIs	https://doi.org/10.1021/acs.nanolett.3c03349
Publication status	Published - 2023

Funding

We gratefully acknowledge D. Degli-Esposti, D. Michalak, and M. Mehmandoost for sharing their expertise on the underlying physics and for their valuable advice. Furthermore, we thank S. L. de Snoo for software support and all the members of the Veldhorst, Vandersypen, and Scappucci group for many stimulating discussions. We acknowledge funding by Intel Corporation. This work is part of the “Quantum Inspire─the Dutch Quantum Computer in the Cloud” project (with project number [NWA.1292.19.194]) of the NWA research program “Research on Routes by Consortia (ORC)”, which is funded by The Netherlands Organization for Scientific Research (NWO).

Keywords

Quantum Dot
Single-electron Occupation
Spin Qubit
Stress Voltage
Uniformity

Access to Document

10.1021/acs.nanolett.3c03349

meyer-et-al-2023-single-electron-occupation-in-quantum-dot-arrays-at-selectable-plunger-gate-voltageFinal published version, 4.22 MBLicence: CC BY

Cite this

@article{3b8b509adfce43adab22897f37594437,

title = "Single-Electron Occupation in Quantum Dot Arrays at Selectable Plunger Gate Voltage",

abstract = "The small footprint of semiconductor qubits is favorable for scalable quantum computing. However, their size also makes them sensitive to their local environment and variations in the gate structure. Currently, each device requires tailored gate voltages to confine a single charge per quantum dot, clearly challenging scalability. Here, we tune these gate voltages and equalize them solely through the temporary application of stress voltages. In a double quantum dot, we reach a stable (1,1) charge state at identical and predetermined plunger gate voltage and for various interdot couplings. Applying our findings, we tune a 2 × 2 quadruple quantum dot such that the (1,1,1,1) charge state is reached when all plunger gates are set to 1 V. The ability to define required gate voltages may relax requirements on control electronics and operations for spin qubit devices, providing means to advance quantum hardware.",

keywords = "Quantum Dot, Single-electron Occupation, Spin Qubit, Stress Voltage, Uniformity",

author = "Marcel Meyer and Corentin D{\'e}prez and Meijer, {Ilja N.} and Unseld, {Florian K.} and Saurabh Karwal and Amir Sammak and Giordano Scappucci and Vandersypen, {Lieven M.K.} and Menno Veldhorst",

year = "2023",

doi = "10.1021/acs.nanolett.3c03349",

language = "English",

volume = "23",

pages = "11593--11600",

journal = "Nano Letters",

issn = "1530-6984",

publisher = "American Chemical Society (ACS)",

number = "24",

}

TY - JOUR

T1 - Single-Electron Occupation in Quantum Dot Arrays at Selectable Plunger Gate Voltage

AU - Meyer, Marcel

AU - Déprez, Corentin

AU - Meijer, Ilja N.

AU - Unseld, Florian K.

AU - Karwal, Saurabh

AU - Sammak, Amir

AU - Scappucci, Giordano

AU - Vandersypen, Lieven M.K.

AU - Veldhorst, Menno

PY - 2023

Y1 - 2023

N2 - The small footprint of semiconductor qubits is favorable for scalable quantum computing. However, their size also makes them sensitive to their local environment and variations in the gate structure. Currently, each device requires tailored gate voltages to confine a single charge per quantum dot, clearly challenging scalability. Here, we tune these gate voltages and equalize them solely through the temporary application of stress voltages. In a double quantum dot, we reach a stable (1,1) charge state at identical and predetermined plunger gate voltage and for various interdot couplings. Applying our findings, we tune a 2 × 2 quadruple quantum dot such that the (1,1,1,1) charge state is reached when all plunger gates are set to 1 V. The ability to define required gate voltages may relax requirements on control electronics and operations for spin qubit devices, providing means to advance quantum hardware.

AB - The small footprint of semiconductor qubits is favorable for scalable quantum computing. However, their size also makes them sensitive to their local environment and variations in the gate structure. Currently, each device requires tailored gate voltages to confine a single charge per quantum dot, clearly challenging scalability. Here, we tune these gate voltages and equalize them solely through the temporary application of stress voltages. In a double quantum dot, we reach a stable (1,1) charge state at identical and predetermined plunger gate voltage and for various interdot couplings. Applying our findings, we tune a 2 × 2 quadruple quantum dot such that the (1,1,1,1) charge state is reached when all plunger gates are set to 1 V. The ability to define required gate voltages may relax requirements on control electronics and operations for spin qubit devices, providing means to advance quantum hardware.

KW - Quantum Dot

KW - Single-electron Occupation

KW - Spin Qubit

KW - Stress Voltage

KW - Uniformity

UR - http://www.scopus.com/inward/record.url?scp=85181001003&partnerID=8YFLogxK

U2 - 10.1021/acs.nanolett.3c03349

DO - 10.1021/acs.nanolett.3c03349

M3 - Article

C2 - 38091376

AN - SCOPUS:85181001003

SN - 1530-6984

VL - 23

SP - 11593

EP - 11600

JO - Nano Letters

JF - Nano Letters

IS - 24

ER -

Single-Electron Occupation in Quantum Dot Arrays at Selectable Plunger Gate Voltage

Abstract

Funding

Keywords

Access to Document

Other files and links

Fingerprint

Cite this