Single grain Si TFTs and local electrical properties of CSL boundaries

R Ishihara; N Matsuki; T Chen; D Danciu; V Rana; Y Hiroshima; S Inoue

Single grain Si TFTs and local electrical properties of CSL boundaries

R Ishihara, N Matsuki, T Chen, D Danciu, V Rana, Y Hiroshima, S Inoue

Electronic Components, Technology and Materials

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

Original language	Undefined/Unknown
Title of host publication	Digest of technical papers of the fifteenth international workshop on active-matrix flatpanel displays and devices -TFT technologies and FPD materials
Editors	H Hamada
Place of Publication	Tokio, Japan
Publisher	Japan Society of Applied Physics
Pages	25-28
Number of pages	4
Publication status	Published - 2008
Event	The fifteenth international workshop on active-matrix flatpanel displays and devices -TFT technologies and FPD materials- Tokio, Japan - Tokio, Japan Duration: 2 Jul 2008 → 4 Jul 2008

Publication series

Name
Publisher	The Japan Society of Applied Physics

Conference

Conference	The fifteenth international workshop on active-matrix flatpanel displays and devices -TFT technologies and FPD materials- Tokio, Japan
Period	2/07/08 → 4/07/08

Keywords

Elektrotechniek
Techniek
conference contrib. refereed
Conf.proc. > 3 pag

Cite this

Ishihara, R., Matsuki, N., Chen, T., Danciu, D., Rana, V., Hiroshima, Y., & Inoue, S. (2008). Single grain Si TFTs and local electrical properties of CSL boundaries. In H. Hamada (Ed.), Digest of technical papers of the fifteenth international workshop on active-matrix flatpanel displays and devices -TFT technologies and FPD materials (pp. 25-28). Japan Society of Applied Physics.

@inproceedings{85a2eeef4bb44b14b33bc6f93698f047,

title = "Single grain Si TFTs and local electrical properties of CSL boundaries",

keywords = "Elektrotechniek, Techniek, conference contrib. refereed, Conf.proc. > 3 pag",

author = "R Ishihara and N Matsuki and T Chen and D Danciu and V Rana and Y Hiroshima and S Inoue",

year = "2008",

language = "Undefined/Unknown",

publisher = "Japan Society of Applied Physics",

pages = "25--28",

editor = "H Hamada",

booktitle = "Digest of technical papers of the fifteenth international workshop on active-matrix flatpanel displays and devices -TFT technologies and FPD materials",

address = "Japan",

note = "The fifteenth international workshop on active-matrix flatpanel displays and devices -TFT technologies and FPD materials- Tokio, Japan ; Conference date: 02-07-2008 Through 04-07-2008",

}

Ishihara, R, Matsuki, N, Chen, T, Danciu, D, Rana, V, Hiroshima, Y & Inoue, S 2008, Single grain Si TFTs and local electrical properties of CSL boundaries. in H Hamada (ed.), Digest of technical papers of the fifteenth international workshop on active-matrix flatpanel displays and devices -TFT technologies and FPD materials. Japan Society of Applied Physics, Tokio, Japan, pp. 25-28, The fifteenth international workshop on active-matrix flatpanel displays and devices -TFT technologies and FPD materials- Tokio, Japan, 2/07/08.

Single grain Si TFTs and local electrical properties of CSL boundaries. / Ishihara, R; Matsuki, N; Chen, T et al.
Digest of technical papers of the fifteenth international workshop on active-matrix flatpanel displays and devices -TFT technologies and FPD materials. ed. / H Hamada. Tokio, Japan: Japan Society of Applied Physics, 2008. p. 25-28.

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

TY - GEN

T1 - Single grain Si TFTs and local electrical properties of CSL boundaries

AU - Ishihara, R

AU - Matsuki, N

AU - Chen, T

AU - Danciu, D

AU - Rana, V

AU - Hiroshima, Y

AU - Inoue, S

PY - 2008

Y1 - 2008

KW - Elektrotechniek

KW - Techniek

KW - conference contrib. refereed

KW - Conf.proc. > 3 pag

M3 - Conference contribution

SP - 25

EP - 28

BT - Digest of technical papers of the fifteenth international workshop on active-matrix flatpanel displays and devices -TFT technologies and FPD materials

A2 - Hamada, H

PB - Japan Society of Applied Physics

CY - Tokio, Japan

T2 - The fifteenth international workshop on active-matrix flatpanel displays and devices -TFT technologies and FPD materials- Tokio, Japan

Y2 - 2 July 2008 through 4 July 2008

ER -

Ishihara R, Matsuki N, Chen T, Danciu D, Rana V, Hiroshima Y et al. Single grain Si TFTs and local electrical properties of CSL boundaries. In Hamada H, editor, Digest of technical papers of the fifteenth international workshop on active-matrix flatpanel displays and devices -TFT technologies and FPD materials. Tokio, Japan: Japan Society of Applied Physics. 2008. p. 25-28